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| D a t a S h e e t , Rev. 1.6, D e c . 2 0 0 4 HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double-Data-Rate SDRAM Memory Products Never stop thinking. Edition 2004-12 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. D a t a S h e e t , Rev. 1.6, D e c . 2 0 0 4 HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F] 256 Mbit Double-Data-Rate SDRAM Memory Products Never stop thinking. HYB25D256[40/80/16]0CE(L), HYB25D256[40/80/16]0C[T/C/F] Revision History: Previous Version: 19,20,21 Rev. 1.6 Rev. 1.5 2004-12 2004-11 editorial change We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: techdoc.mp@infineon.com Template: mp_a4_v1.0_2003-04-25.fm HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Table of Contents 1 1.1 1.2 2 3 3.1 3.2 3.2.1 3.2.2 3.2.3 3.2.4 3.3 3.3.1 3.3.2 3.4 3.5 3.5.1 3.5.2 3.5.3 3.5.4 3.5.5 3.5.6 3.6 4 4.1 4.2 4.3 4.4 4.5 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.10 5.11 5.12 5.13 6 7 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Mode Register Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Burst Length . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Burst Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read Latency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Extended Mode Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DLL Enable/Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Drive Strength . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bank/Row Activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Writes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Clock Frequency Change . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Simplified State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Normal Strength Pull-down and Pull-up Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Weak Strength Pull-down and Pull-up Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDD Current Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Timing Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write Command: Data Input Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read Command: Data Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Initialization and Mode Register Set Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power: Power Down Mode Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Refresh: Auto Refresh Mode Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Refresh: Self Refresh Mode Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read: Without Auto Precharge Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read: With Auto Precharge Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read: Bank Read Access Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write: Without Auto Precharge Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write: With Auto Precharge Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write: Bank Write Access Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write: DM Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 22 23 24 24 25 25 26 26 26 27 30 30 31 41 55 56 60 61 62 62 64 66 68 75 77 77 78 79 80 81 82 83 84 85 86 87 88 89 System Characteristics for DDR SDRAMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 Data Sheet 5 Rev. 1.6, 2004-12 08012003-8754-PAQX HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Figure 27 Figure 28 Figure 29 Figure 30 Figure 31 Figure 32 Figure 33 Figure 34 Figure 35 Figure 36 Figure 37 Figure 38 Figure 39 Figure 40 Figure 41 Figure 42 Figure 43 Figure 44 Figure 45 Figure 46 Figure 47 Figure 48 Figure 49 Figure 50 Figure 51 Figure 52 Figure 53 Data Sheet Pin Configuration P-TFBGA-60-9 Top View, see the balls throught the package . . . . . . . . . . . . . Pin Configuration P-TSOPII-66-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Block Diagram 16 Mbit x 4 I/O x 4 Internal Memory Banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Block Diagram 8 Mbit x 8 I/O x 4 Internal Memory Banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Block Diagram 4 Mbit x 16 I/O x 4 Internal Memory Banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Required CAS Latencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Activating a Specific Row in a Specific Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tRCD and tRRD Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read Burst: CAS Latencies (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Consecutive Read Bursts: CAS Latencies (Burst Length = 4 or 8) . . . . . . . . . . . . . . . . . . . . . . . . Non-Consecutive Read Bursts: CAS Latencies (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . Random Read Accesses: CAS Latencies (Burst Length = 2, 4 or 8) . . . . . . . . . . . . . . . . . . . . . . . Terminating a Read Burst: CAS Latencies (Burst Length = 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read to Write: CAS Latencies (Burst Length = 4 or 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read to Precharge: CAS Latencies (Burst Length = 4 or 8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write Burst (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write to Write (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write to Write: Max. DQSS, Non-Consecutive (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . Random Write Cycles (Burst Length = 2, 4 or 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write to Read: Non-Interrupting (CAS Latency = 2; Burst Length = 4). . . . . . . . . . . . . . . . . . . . . . Write to Read: Interrupting (CAS Latency = 2; Burst Length = 8). . . . . . . . . . . . . . . . . . . . . . . . . . Write to Read: Min. DQSS, Odd Number of Data (3-bit Write), Interrupting (CL2; BL8) . . . . . . . . Write to Read: Nominal DQSS, Interrupting (CAS Latency = 2; Burst Length = 8) . . . . . . . . . . . . Write to Precharge: Non-Interrupting (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write to Precharge: Interrupting (Burst Length = 4 or 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write to Precharge: Minimum DQSS, Odd Number of Data (1-bit Write), Interrupting (BL 4 or 8). Write to Precharge: Nominal DQSS (2-bit Write), Interrupting (Burst Length = 4 or 8) . . . . . . . . . Precharge Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clock frequency change in pre charge power down mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Simplified State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Normal Strength Pull-down Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Normal Strength Pull-up Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Weak Strength Pull-down Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Weak Strength Pull-up Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Output Load Circuit Diagram / Timing Reference Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data Input (Write), Timing Burst Length = 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data Output (Read), Timing Burst Length = 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Initialize and Mode Register Sets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Down Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Auto Refresh Mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Self Refresh Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read without Auto Precharge (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Read with Auto Precharge (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bank Read Access (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write without Auto Precharge (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write with Auto Precharge (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bank Write Access (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Write DM Operation (Burst Length = 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pullup slew rate test load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulldown slew rate test load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 17 18 19 20 21 25 30 30 33 34 35 36 37 38 39 40 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 60 61 64 64 66 66 68 77 78 79 80 81 82 83 84 85 86 87 88 89 91 91 Rev. 1.6, 2004-12 08012003-8754-PAQX HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM List of Figures Figure 54 Figure 55 Package Outline of P-TFBGA-60-12 (non-green/green) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 Package Outline of P-TSOPII-66-1 (non-green/green). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 Data Sheet 7 Rev. 1.6, 2004-12 08012003-8754-PAQX HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 9 Table 8 Table 11 Table 10 Table 12 Table 13 Table 14 Table 15 Table 16 Table 18 Table 17 Table 19 Table 20 Table 21 Table 22 Table 23 Table 24 Table 25 Table 26 Table 27 Table 28 Table 29 Table 30 Table 31 Table 32 Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Ordering Information for Lead Containing Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Ordering Information for Lead free (RoHS Compliant) Products . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Pin Configuration of DDR SDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations for Pin Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations for Buffer Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Burst Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Truth Table 1b: DM Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Truth Table 1a: Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Truth Table 3: Current State Bank n - Command to Bank n (same bank) . . . . . . . . . . . . . . . . . . . 57 Truth Table 2: Clock Enable (CKE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 Truth Table 4: Current State Bank n - Command to Bank m (different bank). . . . . . . . . . . . . . . . . 59 Truth Table 5: Concurrent Auto Precharge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 Input and Output Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 Electrical Characteristics and DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Evaluation Conditions for I/O Driver Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Normal Strength Pull-down and Pull-up Currents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Weak Strength Driver Pull-down and Pull-up Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 AC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 AC Timing - Absolute Specifications for PC3200 and PC2700 . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 AC Timing - Absolute Specifications for PC2700 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 IDD Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74 IDD Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 Input Slew Rate for DQ, DQS, and DM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Input Setup & Hold Time Derating for Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Input/Output Setup and Hold TIme Derating for Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Input/Output Setup and Hold Derating for Rise/Fall Delta Slew Rate. . . . . . . . . . . . . . . . . . . . . . . 90 Output Slew Rate Characteristrics (x4, x8 Devices only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 Output Slew Rate Characteristics (x16 Devices only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 Output Slew Rate Matching Ratio Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 TFBGA Common Package Properties (non-green/green) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 Data Sheet 8 Rev. 1.6, 2004-12 08012003-8754-PAQX 256 Mbit Double-Data-Rate SDRAM DDR SDRAM HYB25D256[40/80/16]0CE(L) HYB25D256[40/80/16]0C[T/C/F] 1 1.1 * * * * * * * * * * * * * * * * * * * * Overview Features Double data rate architecture: two data transfers per clock cycle Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver DQS is edge-aligned with data for reads and is center-aligned with data for writes Differential clock inputs (CK and CK) Four internal banks for concurrent operation Data mask (DM) for write data DLL aligns DQ and DQS transitions with CK transitions Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS Burst Lengths: 2, 4, or 8 CAS Latency: 1.5 (DDR200 only), 2, 2.5, 3 Auto Precharge option for each burst access Auto Refresh and Self Refresh Modes RAS-lockout supported tRAP=tRCD 7.8 s Maximum Average Periodic Refresh Interval 2.5 V (SSTL_2 compatible) I/O VDDQ = 2.5 V 0.2 V (DDR200, DDR266, DDR333); VDDQ = 2.6 V 0.1 V (DDR400) VDD = 2.5 V 0.2 V (DDR200, DDR266, DDR333); VDD = 2.6 V 0.1 V (DDR400) P-TFBGA-60-12 package with 3 depopulated rows (8 x 12 mm2) P-TSOPII-66 package Lead- and halogene-free = green product Performance -5 Component Module @CL3 @CL2.5 @CL2 DDR400B PC3200-3033 -6 DDR333 PC2700-2533 166 166 133 -7 DDR266A PC2100-2033 -- 143 133 Unit -- -- MHz MHz MHz Table 1 Part Number Speed Code Speed Grade max. Clock Frequency fCK3 200 fCK2.5 166 fCK2 133 Data Sheet 9 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Overview 1.2 Description The 256 Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The 256 Mbit Double-Data-Rate SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the 256 Mbit Double-Data-Rate SDRAM effectively consists of a single 2n-bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins. A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during Reads and by the memory controller during Writes. DQS is edge-aligned with data for Reads and center-aligned with data for Writes. The 256 Mbit Double-Data-Rate SDRAM operates from a differential clock (CK and CK; the crossing of CK going HIGH and CK going LOW is referred to as the positive edge of CK). Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK.Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be accessed. The address bits registered coincident with the Read or Write command are used to select the bank and the starting column location for the burst access. The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4 or 8 locations. An Auto Precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard SDRAMs, the pipelined, multibank architecture of DDR SDRAMs allows for concurrent operation, thereby providing high effective bandwidth by hiding row precharge and activation time. An auto refresh mode is provided along with a power-saving power-down mode. All inputs are compatible with the JEDEC Standard for SSTL_2. All outputs are SSTL_2, Class II compatible. Note: The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation. Table 2 Ordering Information for Lead Containing Products Org. CAS-RCD-RP Clock Latencies (MHz) x8 x16 x8 x16 x4 x4 x8 x16 x4 x8 x16 2.5-3-3 166 2-3-3 133 DDR333 3-3-3 143 200 2.5-3-3 166 DDR266A DDR400B P-TFBGA-60 2.5-3-3 166 2-3-3 133 DDR333 3-3-3 200 CAS-RCD-RP Clock Latencies (MHz) 2.5-3-3 166 Speed DDR400B Package P-TSOPII-66 Product Type2) HYB25D256800CT-5 HYB25D256160CT-5 HYB25D256800CT-6 HYB25D256160CT-6 HYB25D256400CT-7 HYB25D256400CC-5 HYB25D256800CC-5 HYB25D256160CC-5 HYB25D256400CC-6 HYB25D256800CC-6 HYB25D256160CC-6 HYB25D256800CT(L)-6 x8 Data Sheet 10 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Overview Table 3 Ordering Information for Lead free (RoHS1) Compliant) Products Org. x8 x16 x8 x16 x8 x16 x4 x8 2.5-3-3 143 166 2-3-3 133 DDR266A DDR333 P-TFBGA-60 2.5-3-3 166 2-3-3 133 DDR333 3-3-3 200 2.5-3-3 166 DDR400B CAS-RCD-RP Clock Latencies (MHz) 2.5-3-3 200 CAS-RCD-RP Clock Speed Latencies (MHz) 2-3-3 133 DDR400A Package P-TSOPII-66 Product Type2) HYB25D256800CE-5A HYB25D256160CE-5A HYB25D256800CE-5 HYB25D256160CE-5 HYB25D256800CE-6 HYB25D256160CE-6 HYB25D256400CE-7 HYB25D256800CF-6 HYB25D256800CE(L)-6 x8 1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers. 2) HYB: designator for memory components 25D: DDR SDRAMs at VDDQ = 2.5 V 256: 256-Mbit density 400/800/160: Product variations x4, x8 and x16 C: Die revision C L: low power (available on request) T/E/F/C: Package type TSOP(contains Lead), TSOP(Lead & Halone free), FBGA(Lead & Halone free) and FBGA (contains Lead) Data Sheet 11 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Pin Configuration 2 Pin Configuration The pin configuration of a DDR SDRAM is listed by function in Table 4 (60 pins). The abbreviations used in the Pin#/Buffer# column are explained in Table 5 and Table 6 respectively. The pin numbering for FBGA is depicted in Figure 1 and that of the TSOP package in Figure 2 Table 4 Ball#/Pin# Clock Signals G2, 45 CK I SSTL Clock Signal Note: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK (both directions of crossing). G3, 46 H3, 44 CK CKE I I SSTL SSTL Complementary Clock Signal Clock Enable Rank Note: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry. CKE is asynchronous for self refresh exit. CKE must be maintained high throughout read and write accesses. Input buffers, excluding CK, CK and CKE are disabled during powerdown. Input buffers, excluding CKE, are disabled during self refresh. CKE is an SSTL_2 input, but will detect an LVCMOS LOW level after VDD is applied on first power up. After VREF has become stable during the power on and initialization sequence, it must be mantained for proper operation of the CKE receiver. For proper self-refresh entry and exit, VREF must be mantained to this input. Control Signals H7, 23 G8, 22 G7, 21 H8, 24 RAS CAS WE CS I I I I SSTL SSTL SSTL SSTL Row Address Strobe Column Address Strobe Write Enable Chip Select Note: All commands are masked when CS is registered HIGH. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. The standard pinout includes one CS pin. Address Signals J8, 26 J7, 27 BA0 BA1 I I SSTL SSTL Bank Address Bus 2:0 Note: BA0 and BA1 define to which bank an Active, Read, Write or Precharge command is being applied. BA0 and BA1 also determines if the mode register or extended mode register is to be accessed during a MRS or EMRS cycle. Pin Configuration of DDR SDRAM Name Pin Type Buffer Type Function Data Sheet 12 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Pin Configuration Table 4 Ball#/Pin# K7, 29 L8, 30 L7, 31 M8, 32 M2, 35 L3, 36 L2, 37 K3, 38 K2, 39 J3, 40 K8, 28 J2, 41 H2, 42 Pin Configuration of DDR SDRAM Name A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 AP A11 A12 NC F9, 17 A13 NC B7, 5 D7, 11 D3, 56 B3, 62 E3, 51 DQ0 DQ1 DQ2 DQ3 DQS Pin Type I I I I I I I I I I I I I I NC I NC I/O I/O I/O I/O I/O Buffer Type SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL -- SSTL -- SSTL SSTL SSTL SSTL SSTL Data Strobe Note: Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data. Data Mask x4 organization F3, 47 DM I SSTL Data Mask: Note: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coincident with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. Address Signal 12 Note: 256 Mbit or larger dies Note: 128 Mbit or smaller dies Address Signal 13 Note: 1 Gbit based dies Note: 512 Mbit or smaller dies Data Signal 3:0 Data Signals x4 organization Function Address Bus 11:0 Note: Provide the row address for Active commands, and the column address and Auto Precharge bit for Read/Write commands, to select one location out of the memory array in the respective bank. A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code during a Mode Register Set command. Data Strobe x4 organisation Data Sheet 13 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Pin Configuration Table 4 Ball#/Pin# Pin Configuration of DDR SDRAM Name Pin Type I/O I/O I/O I/O I/O I/O I/O I/O I/O Buffer Type SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL Data Strobe Note: Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data. Data Mask x8 organization F3, 47 DM I SSTL Data Mask Note: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coincident with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. Data Signals x16 organization A8, 2 B9, 4 B7, 5 C9, 7 C7, 8 D9, 10 D7, 11 E9, 13 E1, 54 D3, 56 D1, 57 C3, 59 C1, 60 B3, 62 B1, 63 A2, 65 E3, 51 E7, 16 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 UDQS LDQS I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL SSTL Data Strobe Upper Byte Data Strobe Lower Byte Data Signal 15:0 Function Data Signals x8 organization A8, 2 B7, 5 C7, 8 D7, 11 D3, 56 C3, 59 B3, 62 A2, 65 E3, 51 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS Data Signal 7:0 Data Strobe x8 organisation Data Strobe x16 organization Data Mask x16 organization Data Sheet 14 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Pin Configuration Table 4 Ball#/Pin# F3, 47 F7, 20 F1, 49 A9, B2, C8, D2, E8, 3, 9, 15, 55, 61 A7, F8, M3, M7, 1, 18, 33 A1, B8, C2, D8, E2, 6, 12, 52, 58, 64 F2, 34 Not Connected A2, 65 A8, 2 B1, 63 B9, 4 C1, 60 C3, 59 C7, 8 C9, 7 D1, 57 D9, 10 E1, 54 E7, 16 E9, 13 F7, 20 NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC -- -- -- -- -- -- -- -- -- -- -- -- -- -- Not Connected Note: x4 organization Not Connected Note: x4 organization Not Connected Note: x8 and x4 organisation Not Connected Note: x8 and x4 organization Not Connected Note: x8 and x4 organization Not Connected Note: x4 organization Not Connected Note: x4 organization Not Connected Note: x8 and x4 organization Not Connected Note: x8 and x4 organization Not Connected Note: x8 and x4 organization Not Connected Note: x8 and x4 organization Not Connected Note: x8 and x4 organization Not Connected Note: x8 and x4 organization Not Connected Note: x8 and x4 organization Data Sheet 15 Rev. 1.6, 2004-12 Pin Configuration of DDR SDRAM Name UDM LDM Pin Type I I AI PWR Buffer Type SSTL SSTL -- -- Function Data Mask Upper Byte Data Mask Lower Byte I/O Reference Voltage I/O Driver Power Supply Power Supplies VREF VDDQ VDD VSSQ VSS PWR PWR -- -- Power Supply Power Supply PWR -- Power Supply HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Pin Configuration Table 4 Ball#/Pin# Pin Configuration of DDR SDRAM Name Pin Type NC Buffer Type -- Function Not Connected Note: x16,x8 and x4 organization F9, 14, 17, 19, NC 25,43, 50, 53 Table 5 Abbreviation I O I/O AI PWR GND NC Table 6 Abbreviation SSTL LV-CMOS Abbreviations for Pin Type Description Standard input-only pin. Digital levels. Output. Digital levels. I/O is a bidirectional input/output signal. Input. Analog levels. Power Ground Not Connected Abbreviations for Buffer Type Description Serial Stub Terminated Logic (SSTL2) Low Voltage CMOS CMOS OD CMOS Levels Open Drain. The corresponding pin has 2 operational states, active low and tristate, and allows multiple devices to share as a wire-OR. Data Sheet 16 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Pin Configuration 9664 1& 1& 1& 1& 95() 1& 9''4 9664 9''4 9664 966 &. 966 '4 1& '4 '46 '0 &. $ % & ' ( ) * + . / 0 [ 9'' '4 1& '4 1& 1& :( 5$6 %$ $ $ 9'' 1& 9664 9''4 9664 9''4 9'' &$6 &6 %$ $$3 $ $ 9''4 1& 1& 1& 1& 1&$ 9664 1& 1& 1& 1& 95() '4 9''4 9664 9''4 9664 966 &. 966 '4 '4 '4 '46 '0 &. $ % & ' ( ) * + . / 0 [ 9'' '4 '4 '4 1& 1& :( 5$6 %$ $ $ 9'' '4 9664 9''4 9664 9''4 9'' &$6 &6 %$ $$3 $ $ 9''4 1& 1& 1& 1& 1&$ 1&,$ &.( $ $ $ $ $ $ $ 966 1&,$ &.( $ $ $ $ $ $ $ 966 9664 '4 '4 '4 '4 95() '4 9''4 9664 9''4 9664 966 &. 966 '4 '4 '4 8'46 8'0 &. $ % & ' ( ) * + . / 0 [ 9'' '4 '4 '4 /'46 /'0 :( 5$6 %$ $ $ 9'' '4 9664 9''4 9664 9''4 9'' &$6 &6 %$ $$3 $ $ 9''4 '4 '4 '4 '4 1&$ 1&,$ &.( $ $ $ $ $ $ $ 966 033' Figure 1 Pin Configuration P-TFBGA-60-9 Top View, see the balls throught the package Data Sheet 17 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Pin Configuration 0E [ 0E [ 0E [ 9'' 1& 9''4 1& '4 9664 1& 1& 9''4 1& '4 9664 1& 1& 9''4 1& 9'' 1& 1& :( &$6 5$6 &6 1& %$ %$ $$3 $ $ $ $ 9'' 9'' '4 9''4 1& '4 9664 1& '4 9''4 1& '4 9664 1& 1& 9''4 1& 9'' 1& 1& :( &$6 5$6 &6 1& %$ %$ $$3 $ $ $ $ 9'' 9'' '4 9''4 '4 '4 9664 '4 '4 9''4 '4 '4 9664 '4 1& 9''4 /'46 9'' 1& /'0 :( &$6 5$6 &6 1& %$ %$ $$3 $ $ $ $ 9'' 966 '4 9664 '4 '4 9''4 '4 '4 9664 '4 '4 9''4 '4 1& 9664 8'46 1& 95() 966 8'0 &. &. &.( 1& $ $ $ $ $ $ $ 966 966 '4 9664 1& '4 9''4 1& '4 9664 1& '4 9''4 1& 1& 9664 '46 1& 95() 966 '0 &. &. &.( 1& $ $ $ $ $ $ $ 966 966 1& 9664 1& '4 9''4 1& 1& 9664 1& '4 9''4 1& 1& 9664 '46 1& 95() 966 '0 &. &. &.( 1& $ $ $ $ $ $ $ 966 033' 1&$ 1&$ 1&$ 1&$ 1&$ 1&$ Figure 2 Pin Configuration P-TSOPII-66-1 Data Sheet 18 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Pin Configuration Drivers Receivers Read Latch Bank0 Row-Address Latch & Decoder Bank Control Logic Row-Address MUX Refresh Counter Address Register Figure 3 Block Diagram 16 Mbit x 4 I/O x 4 Internal Memory Banks Data Sheet 19 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Pin Configuration Drivers Receivers Read Latch Bank0 Row-Address Latch & Decoder Bank Control Logic Row-Address MUX Refresh Counter Address Register Figure 4 Block Diagram 8 Mbit x 8 I/O x 4 Internal Memory Banks Data Sheet 20 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Pin Configuration Drivers Receivers Read Latch Bank0 Row-Address Latch & Decoder Bank Control Logic Row-Address MUX Refresh Counter Address Register Figure 5 Block Diagram 4 Mbit x 16 I/O x 4 Internal Memory Banks Data Sheet 21 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3 Functional Description The 256 Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. The 256 Mbit Double-Data-Rate SDRAM is internally configured as a quad-bank DRAM. The 256 Mbit Double-Data-Rate SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data-rate architecture is essentially a 2n prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the 256 Mbit Double-Data-Rate SDRAM consists of a single 2n-bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A12 select the row). The address bits registered coincident with the Read or Write command are used to select the starting column location for the burst access. Prior to normal operation, the DDR SDRAM must be initialized. The following sections provide detailed information covering device initialization, register definition, command descriptions and device operation. 3.1 Initialization DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. The following criteria must be met: No power sequencing is specified during power up or power down given the following criteria: * * * * * * A minimum resistance of 42 limits the input current from the VTT supply into any pin and VREF tracks VDDQ/2 or the following relationship must be followed: VDDQ is driven after or with VDD such that VDDQ < VDD + 0.3 V VTT is driven after or with VDDQ such that VTT < VDDQ + 0.3 V VREF is driven after or with VDDQ such that VREF < VDDQ + 0.3 V VDD and VDDQ are driven from a single power converter output VTT meets the specification The DQ and DQS outputs are in the High-Z state, where they remain until driven in normal operation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR SDRAM requires a 200 s delay prior to applying an executable command. Once the 200 s delay has been satisfied, a Deselect or NOP command should be applied, and CKE should be brought HIGH. Following the NOP command, a Precharge ALL command should be applied. Next a Mode Register Set command should be issued for the Extended Mode Register, to enable the DLL, then a Mode Register Set command should be issued for the Mode Register, to reset the DLL, and to program the operating parameters. 200 clock cycles are required between the DLL reset and any executable command. During the 200 cycles of clock for DLL locking, a Deselect or NOP command must be applied. After the 200 clock cycles, a Precharge ALL command should be applied, placing the device in the "all banks idle" state. Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a Mode Register Set command for the Mode Register, with the reset DLL bit deactivated (i.e. to program operating parameters without resetting the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation. Data Sheet 22 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.2 Mode Register Definition The Mode Register is used to define the specific mode of operation of the DDR SDRAM. This definition includes the selection of a burst length, a burst type, a CAS latency, and an operating mode. The Mode Register is programmed via the Mode Register Set command (with BA0 = 0 and BA1 = 0) and retains the stored information until it is programmed again or the device loses power (except for bit A8, which is self-clearing). Mode Register bits A0-A2 specify the burst length, A3 specifies the type of burst (sequential or interleaved), A4A6 specify the CAS latency, and A7-A12 specify the operating mode. The Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before initiating the subsequent operation. Violating either of these requirements results in unspecified operation. MR Mode Register Definition BA1 0 BA0 0 A12 A11 A10 A9 (BA[1:0] = 00B) A8 A7 A6 A5 CL w A4 A3 BT w A2 A1 BL w A0 OPERATING MODE w reg. addr Field BL Bits [2:0] Type1) Description w Burst Length Number of sequential bits per DQ related to one read/write command; see Chapter 3.2.1. Note: All other bit combinations are RESERVED. 001 2 010 4 011 8 BT 3 Burst Type See Table 7 for internal address sequence of low order address bits; see Chapter 3.2.2. 0 Sequential 1 Interleaved CAS Latency Number of full clocks from read command to first data valid window; see Chapter 3.2.3. Note: All other bit combinations are RESERVED. 010 2 011 3 101 1.5 Note: DDR200 components only 110 2.5 CL [6:4] MODE [12:7] Operating Mode See Chapter 3.2.4. Note: All other bit combinations are RESERVED. 000000 000010 Normal Operation without DLL Reset Normal Operation with DLL Reset 1) w = write only register bit Data Sheet 23 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.2.1 Burst Length Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst length determines the maximum number of column locations that can be accessed for a given Read or Write command. Burst lengths of 2, 4, or 8 locations are available for both the sequential and the interleaved burst types. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2-Ai when the burst length is set to four and by A3-Ai when the burst length is set to eight (where Ai is the most significant column address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. The programmed burst length applies to both Read and Write bursts. 3.2.2 Burst Type Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in Table 7. Table 7 Burst Length 2 4 0 0 1 1 8 0 0 0 0 1 1 1 1 Notes 1. For a burst length of two, A1-Ai selects the two-data-element block; A0 selects the first access within the block. 2. For a burst length of four, A2-Ai selects the four-data-element block; A0-A1 selects the first access within the block. 3. For a burst length of eight, A3-Ai selects the eight-data- element block; A0-A2 selects the first access within the block. 4. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. 0 0 1 1 0 0 1 1 Burst Definition Starting Column Address A2 A1 A0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-7-0-1-2 4-5-6-7-0-1-2-3 5-6-7-0-1-2-3-4 6-7-0-1-2-3-4-5 7-0-1-2-3-4-5-6 Order of Accesses Within a Burst Type = Sequential Type = Interleaved 0-1 1-0 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0 0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4 4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 Data Sheet 24 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.2.3 Read Latency The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a Read command and the availability of the first burst of output data. The latency can be programmed 2, 2.5 and 3 clocks. CAS latency of 1.5 is supported for DDR200 components only. If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident with clock edge n + m (see Figure 6). Reserved states should not be used as unknown operation or incompatibility with future versions may result. 3.2.4 Operating Mode The normal operating mode is selected by issuing a Mode Register Set Command with bits A7-A12 set to zero, and bits A0-A6 set to the desired values. A DLL reset is initiated by issuing a Mode Register Set command with bits A7 and A9-A12 each set to zero, bit A8 set to one, and bits A0-A6 set to the desired values. A Mode Register Set command issued to reset the DLL should always be followed by a Mode Register Set command to select normal operating mode. All other combinations of values for A7-A12 are reserved for future use and/or test modes. Test modes and reserved states should not be used as unknown operation or incompatibility with future versions may result. CAS Latency = 2, BL = 4 CK CK Command Read NOP CL=2 DQS DQ NOP NOP NOP NOP CAS Latency = 2.5, BL = 4 CK CK Command Read NOP CL=2.5 DQS DQ NOP NOP NOP NOP Shown with nominal tAC, tDQSCK, and tDQSQ. Don't Care Figure 6 Required CAS Latencies Data Sheet 25 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.3 Extended Mode Register The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional functions include DLL enable/disable, and output drive strength selection (optional). These functions are controlled via the bits shown in the Extended Mode Register Definition. The Extended Mode Register is programmed via the Mode Register Set command (with BA0 = 1 and BA1 = 0) and retains the stored information until it is programmed again or the device loses power. The Extended Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before initiating any subsequent operation. Violating either of these requirements result in unspecified operation. EMR Extended Mode Register Definition BA1 0 BA0 1 A12 A11 A10 A9 (BA[1:0] = 01B) A8 A7 A6 A5 A4 A3 A2 A1 DS w A0 DLL w Operating Mode w reg. addr Field DLL Bits 0 Type1) w Description DLL Status See Chapter 3.3.1. 0 Enabled 1 Disabled Drive Strength See Chapter 3.3.2, Chapter 4.2 and Chapter 4.3. 0 Normal 1 Weak Operating Mode Note: All other bit combinations are RESERVED. 00000000000Normal Operation DS 1 MODE [12:2] 1) w = write only register bit 3.3.1 DLL Enable/Disable The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any time the DLL is enabled, 200 clock cycles must occur before a Read command can be issued. This is the reason 200 clock cycles must occur before issuing a Read or Write command upon exit of self refresh operation. 3.3.2 Output Drive Strength The normal drive strength for all outputs is specified to be SSTL_2, Class II. In addition this design version supports a weak driver mode for lighter load and/or point-to-point environments which can be activated during mode register set. I-V curves for the normal and weak drive strength are included in this document. Data Sheet 26 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.4 Deselect Commands The Deselect function prevents new commands from being executed by the DDR SDRAM. The DDR SDRAM is effectively deselected. Operations already in progress are not affected. No Operation (NOP) The No Operation (NOP) command is used to perform a NOP to a DDR SDRAM. This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. Mode Register Set The mode registers are loaded via inputs A0-A12, BA0 and BA1. See mode register descriptions in Chapter 3.2. The Mode Register Set command can only be issued when all banks are idle and no bursts are in progress. A subsequent executable command cannot be issued until tMRD is met. Active The Active command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-A12 selects the row. This row remains active (or open) for accesses until a Precharge (or Read or Write with Auto Precharge) is issued to that bank. A Precharge (or Read or Write with Auto Precharge) command must be issued and completed before opening a different row in the same bank. Read The Read command is used to initiate a burst read access to an active (open) row. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-Ai, Aj (where [i = 8, j = don't care] for x16, [i = 9, j = don't care] for x8 and [i = 9, j = 11] for x4) selects the starting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected, the row being accessed is precharged at the end of the Read burst; if Auto Precharge is not selected, the row remains open for subsequent accesses. Write The Write command is used to initiate a burst write access to an active (open) row. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-Ai, Aj (where [i = 9, j = don't care] for x8; where [i = 9, j = 11] for x4) selects the starting column location. The value on input A10 determines whether or not Auto Precharge is used. If Auto Precharge is selected, the row being accessed is precharged at the end of the Write burst; if Auto Precharge is not selected, the row remains open for subsequent accesses. Input data appearing on the DQs is written to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered low, the corresponding data is written to memory; if the DM signal is registered high, the corresponding data inputs are ignored, and a Write is not executed to that byte/column location. Precharge The Precharge command is used to deactivate (close) the open row in a particular bank or the open row(s) in all banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the Precharge command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as "Don't Care". Once a bank has been precharged, it is in the idle state and must be activated prior to any Read or Write commands being issued to that bank. A precharge command is treated as a NOP if there is no open row in that bank, or if the previously open row is already in the process of precharging. Data Sheet 27 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Auto Precharge Auto Precharge is a feature which performs the same individual-bank precharge functions described above, but without requiring an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction with a specific Read or Write command. A precharge of the bank/row that is addressed with the Read or Write command is automatically performed upon completion of the Read or Write burst. Auto Precharge is nonpersistent in that it is either enabled or disabled for each individual Read or Write command. Auto Precharge ensures that the precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to the same bank until the precharge (tRP) is completed. This is determined as if an explicit Precharge command was issued at the earliest possible time, as described for each burst type in Chapter 3.5. Burst Terminate The Burst Terminate command is used to truncate read bursts (with Auto Precharge disabled). The most recently registered Read command prior to the Burst Terminate command is truncated, as shown in Chapter 3.5. Auto Refresh Auto Refresh is used during normal operation of the DDR SDRAM and is analogous to CAS Before RAS (CBR) Refresh in previous DRAM types. This command is nonpersistent, so it must be issued each time a refresh is required. The refresh addressing is generated by the internal refresh controller. This makes the address bits "Don't Care" during an Auto Refresh command. The 256 Mbit Double-Data-Rate SDRAM requires Auto Refresh cycles at an average periodic interval of 7.8 s (maximum). To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of eight Auto Refresh commands can be posted in the system, meaning that the maximum absolute interval between any Auto Refresh command and the next Auto Refresh command is 9 x 7.8 s (70.2 s). This maximum absolute interval is short enough to allow for DLL updates internal to the DDR SDRAM to be restricted to Auto Refresh cycles, without allowing too much drift in tAC between updates. Self Refresh The Self Refresh command can be used to retain data in the DDR SDRAM, even if the rest of the system is powered down. When in the self refresh mode, the DDR SDRAM retains data without external clocking. The Self Refresh command is initiated as an Auto Refresh command coincident with CKE transitioning low. The DLL is automatically disabled upon entering Self Refresh, and is automatically enabled upon exiting Self Refresh (200 clock cycles must then occur before a Read command can be issued). Input signals except CKE (low) are "Don't Care" during Self Refresh operation.Since CKE is an SSTL_2 input , VREF must be maintained during SELF REFRESH. The procedure for exiting self refresh requires a sequence of commands. CK (and CK) must be stable prior to CKE returning high. Once CKE is high, the SDRAM must have NOP commands issued for tXSNR because time is required for the completion of any internal refresh in progress. A simple algorithm for meeting both refresh and DLL requirements is to apply NOPs for 200 clock cycles before applying any other command. Data Sheet 28 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Table 8 Truth Table 1a: Commands CS H L L L L L L L L RAS CAS WE Address X H L H H H L L L X H H L L H H L L X H H H L L L H L X X Bank/Col Bank/Col X Code X Op-Code MNE NOP NOP Read Write BST PRE AR/SR MRS Notes 1)2) 1)2) 1)3) 1)4) 1)4) 1)5) 1)6) 1)7)8) 1)9) Name (Function) Deselect (NOP) No Operation (NOP) Active (Select Bank And Activate Row) Read (Select Bank And Column, And Start Read Burst) Write (Select Bank And Column, And Start Write Burst) Burst Terminate Precharge (Deactivate Row In Bank Or Banks) Auto Refresh Or Self Refresh (Enter Self Refresh Mode) Mode Register Set 1) CKE is HIGH for all commands shown except Self Refresh. VREF must be maintained during Self Refresh operation 2) Deselect and NOP are functionally interchangeable. Bank/Row ACT 3) BA0-BA1 provide bank address and A0-A12 provide row address. 4) BA0, BA1 provide bank address; A0-Ai provide column address (where i = 8 for x16, i = 9 for x8 and 9, 11 for x4); A10 HIGH enables the Auto Precharge feature (nonpersistent), A10 LOW disables the Auto Precharge feature. 5) Applies only to read bursts with Auto Precharge disabled; this command is undefined (and should not be used) for read bursts with Auto Precharge enabled or for write bursts. 6) A10 LOW: BA0, BA1 determine which bank is precharged. A10 HIGH: all banks are precharged and BA0, BA1 are "Don't Care". 7) This command is Auto Refresh if CKE is HIGH; Self Refresh if CKE is LOW. 8) Internal refresh counter controls row and bank addressing; all inputs and I/Os are "Don't Care" except for CKE. 9) BA0, BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1, BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0-A12 provide the op-code to be written to the selected Mode Register). Table 9 Truth Table 1b: DM Operation DM L H DQs Valid X Notes 1) 1) Name (Function) Write Enable Write Inhibit 1) Used to mask write data; provided coincident with the corresponding data. Data Sheet 29 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.5 3.5.1 Operations Bank/Row Activation Before any Read or Write commands can be issued to a bank within the DDR SDRAM, a row in that bank must be "opened" (activated). This is accomplished via the Active command and addresses A0-A12, BA0 and BA1 (see Figure 7), which decode and select both the bank and the row to be activated. After opening a row (issuing an Active command), a Read or Write command may be issued to that row, subject to the tRCD specification. A subsequent Active command to a different row in the same bank can only be issued after the previous active row has been "closed" (precharged). The minimum time interval between successive Active commands to the same bank is defined by tRC. A subsequent Active command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive Active commands to different banks is defined by tRRD. CK CK CKE CS RAS CAS WE A0-A12 BA0, BA1 RA BA RA = row address. BA = bank address. Don't Care HIGH Figure 7 Activating a Specific Row in a Specific Bank CK CK Command A0-A12 BA0, BA1 ACT ROW BA x NOP ACT ROW BA y NOP NOP RD/WR COL BA y NOP NOP tRRD tRCD Don't Care Figure 8 tRCD and tRRD Definition Data Sheet 30 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.5.2 Reads Subsequent to programming the mode register with CAS latency, burst type, and burst length, Read bursts are initiated with a Read command, as shown on Figure 9. The starting column and bank addresses are provided with the Read command and Auto Precharge is either enabled or disabled for that burst access. If Auto Precharge is enabled, the row that is accessed starts precharge at the completion of the burst, provided tRAS has been satisfied. For the generic Read commands used in the following illustrations, Auto Precharge is disabled. Data Sheet 31 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description During Read bursts, the valid data-out element from the starting column address is available following the CAS latency after the Read command. Each subsequent data-out element is valid nominally at the next positive or negative clock edge (i.e. at the next crossing of CK and CK). Figure 10 shows general timing for each supported CAS latency setting. DQS is driven by the DDR SDRAM along with output data. The initial low state on DQS is known as the read preamble; the low state coincident with the last data-out element is known as the read postamble. Upon completion of a burst, assuming no other commands have been initiated, the DQs goes High-Z. Data from any Read burst may be concatenated with or truncated with data from a subsequent Read command. In either case, a continuous flow of data can be maintained. The first data element from the new burst follows either the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The new Read command should be issued x cycles after the first Read command, where x equals the number of desired data element pairs (pairs are required by the 2n prefetch architecture). This is shown on Figure 11. A Read command can be initiated on any clock cycle following a previous Read command. Nonconsecutive Read data is illustrated on Figure 12. Full-speed Random Read Accesses: CAS Latencies (Burst Length = 2, 4 or 8) within a page (or pages) can be performed as shown on Figure 13.Data from any Read burst may be truncated with a Burst Terminate command, as shown on Figure 14. The Burst Terminate latency is equal to the read (CAS) latency, i.e. the Burst Terminate command should be issued x cycles after the Read command, where x equals the number of desired data element pairs. Data from any Read burst must be completed or truncated before a subsequent Write command can be issued. If truncation is necessary, the Burst Terminate command must be used, as shown on Figure 15. The example is shown for tDQSS(min). The tDQSS(max) case, not shown here, has a longer bus idle time. tDQSS(min) and tDQSS(max) are defined in Chapter 3.5.3. A Read burst may be followed by, or truncated with, a Precharge command to the same bank (provided that Auto Precharge was not activated). The Precharge command should be issued x cycles after the Read command, where x equals the number of desired data element pairs (pairs are required by the 2n prefetch architecture). This is shown on Figure 16 for Read latencies of 2 and 2.5. Following the Precharge command, a subsequent command to the same bank cannot be issued until tRP is met. Note that part of the row precharge time is hidden during the access of the last data elements. In the case of a Read being executed to completion, a Precharge command issued at the optimum time (as described above) provides the same operation that would result from the same Read burst with Auto Precharge enabled. The disadvantage of the Precharge command is that it requires that the command and address busses be available at the appropriate time to issue the command. The advantage of the Precharge command is that it can be used to truncate bursts. Data Sheet 32 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description CK CK CKE CS RAS CAS WE x4: A0-A9, A11 x8: A0-A9 x16: A0-A8 A10 DIS AP BA0, BA1 BA CA = column address BA = bank address EN AP = enable Auto Precharge DIS AP = disable Auto Precharge Don't Care CA EN AP HIGH Figure 9 Read Command Data Sheet 33 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description CAS Latency = 2 CK CK Command Address Read BA a,COL n NOP NOP NOP NOP NOP CL=2 DQS DQ DOa-n CAS Latency = 2.5 CK CK Command Address Read BA a,COL n NOP NOP NOP NOP NOP CL=2.5 DQS DQ DOa-n DO a-n = data out from bank a, column n. 3 subsequent elements of data out appear in the programmed order following DO a-n. Shown with nominal tAC, tDQSCK, and tDQSQ. Don't Care Figure 10 Read Burst: CAS Latencies (Burst Length = 4) Data Sheet 34 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description CAS Latency = 2 CK CK Command Address Read BAa, COL n NOP Read BAa, COL b NOP NOP NOP CL=2 DQS DQ DOa-n DOa-b CAS Latency = 2.5 CK CK Command Address Read BAa, COL n NOP Read BAa,COL b NOP NOP NOP CL=2.5 DQS DQ DOa- n DOa- b DO a-n (or a-b) = data out from bank a, column n (or bank a, column b). When burst length = 4, the bursts are concatenated. When burst length = 8, the second burst interrupts the first. 3 subsequent elements of data out appear in the programmed order following DO a-n. 3 (or 7) subsequent elements of data out appear in the programmed order following DO a-b. Shown with nominal tAC, tDQSCK, and tDQSQ. Don't Care Figure 11 Consecutive Read Bursts: CAS Latencies (Burst Length = 4 or 8) Data Sheet 35 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description CAS Latency = 2 CK CK Command Address Read BAa, COL n NOP NOP Read BAa, COL b NOP NOP CL=2 DQS DQ DO a-n DOa- b CAS Latency = 2.5 CK CK Command Address Read BAa, COL n NOP NOP Read BAa, COL b NOP NOP NOP CL=2.5 DQS DQ DO a-n DOa- b DO a-n (or a-b) = data out from bank a, column n (or bank a, column b). 3 subsequent elements of data out appear in the programmed order following DO a-n (and following DO a-b). Shown with nominal tAC, tDQSCK, and tDQSQ. Don't Care Figure 12 Non-Consecutive Read Bursts: CAS Latencies (Burst Length = 4) Data Sheet 36 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description CAS Latency = 2 CK CK Command Address Read BAa, COL n Read BAa, COL x Read BAa, COL b Read BAa, COL g NOP NOP CL=2 DQS DQ DOa-n DOa-n' DOa-x DOa-x' DOa-b DOa-b' DOa-g CAS Latency = 2.5 CK CK Command Address Read BAa, COL n Read BAa, COL x Read BAa, COL b Read BAa, COL g NOP NOP CL=2.5 DQS DQ DOa-n DOa-n' DOa-x DOa-x' DOa-b DOa-b' DO a-n, etc. = data out from bank a, column n etc. n' etc. = odd or even complement of n, etc. (i.e., column address LSB inverted). Reads are to active rows in any banks. Shown with nominal tAC, tDQSCK, and tDQSQ. Don't Care Figure 13 Random Read Accesses: CAS Latencies (Burst Length = 2, 4 or 8) Data Sheet 37 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description CAS Latency = 2 CK CK Command Address Read BAa, COL n NOP BST NOP NOP NOP CL=2 DQS DQ DOa-n No further output data after this point. DQS tristated. CAS Latency = 2.5 CK CK Command Address Read BAa, COL n NOP BST NOP NOP NOP CL=2.5 DQS DQ DOa-n No further output data after this point. DQS tristated. DO a-n = data out from bank a, column n. Cases shown are bursts of 8 terminated after 4 data elements. 3 subsequent elements of data out appear in the programmed order following DO a-n. Shown with nominal tAC, tDQSCK, and tDQSQ. Don't Care Figure 14 Terminating a Read Burst: CAS Latencies (Burst Length = 8) Data Sheet 38 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description CAS Latency = 2 CK CK Command Address Read BAa, COL n BST NOP Write BAa, COL b NOP NOP CL=2 DQS DQ DM DOa-n tDQSS (min) DI a-b CAS Latency = 2.5 CK CK Command Address Read BAa, COL n BST NOP NOP Write BAa, COL b NOP CL=2.5 DQS DQ DM DOa-n tDQSS (min) Dla-b DO a-n = data out from bank a, column n . a-b = data in to bank a, column b DI 1 subsequent elements of data out appear in the programmed order following DO a-n. Data In elements are applied following Dl a-b in the programmed order, according to burst length. Shown with nominal tAC, tDQSCK, and tDQSQ. Don't Care Figure 15 Read to Write: CAS Latencies (Burst Length = 4 or 8) Data Sheet 39 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description CAS Latency = 2 CK CK Command Read NOP PRE NOP NOP ACT tRP Address BA a, COL n BA a or all BA a, ROW CL=2 DQS DQ DOa-n CAS Latency = 2.5 CK CK Command Read NOP PRE NOP NOP ACT tRP Address BA a, COL n BA a or all BA a, ROW CL=2.5 DQS DQ DOa-n DO a-n = data out from bank a, column n. Cases shown are either uninterrupted bursts of 4 or interrupted bursts of 8. 3 subsequent elements of data out appear in the programmed order following DO a-n. Shown with nominal tAC, tDQSCK, and tDQSQ. Don't Care Figure 16 Read to Precharge: CAS Latencies (Burst Length = 4 or 8) Data Sheet 40 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.5.3 Writes Write bursts are initiated with a Write command, as shown in Figure 17. The starting column and bank addresses are provided with the Write command, and Auto Precharge is either enabled or disabled for that access. If Auto Precharge is enabled, the row being accessed is precharged at the completion of the burst. For the generic Write commands used in the following illustrations, Auto Precharge is disabled. During Write bursts, the first valid data-in element is registered on the first rising edge of DQS following the write command, and subsequent data elements are registered on successive edges of DQS. The Low state on DQS between the Write command and the first rising edge is known as the write preamble; the Low state on DQS following the last data-in element is known as the write postamble. The time between the Write command and the first corresponding rising edge of DQS (tDQSS) is specified with a relatively wide range (from 75% to 125% of one clock cycle), so most of the Write diagrams that follow are drawn for the two extreme cases (i.e. tDQSS(min) and tDQSS(max)). Figure 18 shows the two extremes of tDQSS for a burst of four. Upon completion of a burst, assuming no other commands have been initiated, the DQs and DQS enters High-Z and any additional input data is ignored. Data for any Write burst may be concatenated with or truncated with a subsequent Write command. In either case, a continuous flow of input data can be maintained. The new Write command can be issued on any positive edge of clock following the previous Write command. The first data element from the new burst is applied after either the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The new Write command should be issued x cycles after the first Write command, where x equals the number of desired data element pairs (pairs are required by the 2n prefetch architecture). Figure 19 shows concatenated bursts of 4. An example of non-consecutive Writes is shown in Figure 20. Full-speed random write accesses within a page or pages can be performed as shown in Figure 21. Data for any Write burst may be followed by a subsequent Read command. To follow a Write without truncating the write burst, tWTR (Write to Read) should be met as shown in Figure 22. Data for any Write burst may be truncated by a subsequent Read command, as shown in Figure 23 to Figure 25. Note that only the data-in pairs that are registered prior to the tWTR period are written to the internal array, and any subsequent data-in must be masked with DM, as shown in the diagrams noted previously. Data for any Write burst may be followed by a subsequent Precharge command. To follow a Write without truncating the write burst, tWR should be met as shown in Figure 26. Data for any Write burst may be truncated by a subsequent Precharge command, as shown in Figure 27 to Figure 29. Note that only the data-in pairs that are registered prior to the tWR period are written to the internal array, and any subsequent data in should be masked with DM. Following the Precharge command, a subsequent command to the same bank cannot be issued until tRP is met. In the case of a Write burst being executed to completion, a Precharge command issued at the optimum time (as described above) provides the same operation that would result from the same burst with Auto Precharge. The disadvantage of the Precharge command is that it requires that the command and address busses be available at the appropriate time to issue the command. The advantage of the Precharge command is that it can be used to truncate bursts. Data Sheet 41 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description CK CK CKE CS RAS CAS WE x4: A0-A9, A11 x8: A0-A9 x16: A0-A8 A10 DIS AP BA0, BA1 BA CA = column address BA = bank address EN AP = enable Auto Precharge DIS AP = disable Auto Precharge Don't Care CA EN AP HIGH Figure 17 Write Command Data Sheet 42 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Maximum DQSS T1 CK CK Command Address Write BA a, COL b T2 T3 T4 NOP NOP NOP tDQSS (max) DQS DQ DM Dla-b Minimum DQSS T1 CK CK Command Address Write BA a, COL b NOP NOP NOP T2 T3 T4 tDQSS (min) DQS DQ DM Dla-b DI a-b = data in for bank a, column b. 3 subsequent elements of data in are applied in the programmed order following DI a-b. A non-interrupted burst is shown. A10 is Low with the Write command (Auto Precharge is disabled). Don't Care Figure 18 Write Burst (Burst Length = 4) Data Sheet 43 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Maximum DQSS T1 CK CK Command Address Write BAa, COL b T2 T3 T4 T5 T6 NOP Write BAa, COL n NOP NOP NOP tDQSS (max) DQS DQ DM DI a-b DI a-n Minimum DQSS T1 CK CK Command Address Write BA, COL b T2 T3 T4 T5 T6 NOP Write BA, COL n NOP NOP NOP tDQSS (min) DQS DQ DM DI a-b DI a-n DI a-b = data in for bank a, column b, etc. 3 subsequent elements of data in are applied in the programmed order following DI a-b. 3 subsequent elements of data in are applied in the programmed order following DI a-n. A non-interrupted burst is shown. Each Write command may be to any bank. Don't Care Figure 19 Write to Write (Burst Length = 4) Data Sheet 44 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description T1 CK CK Command Address Write BAa, COL b T2 T3 T4 T5 NOP NOP Write BAa, COL n NOP tDQSS (max) DQS DQ DM DI a-b DI a-n DI a-b, etc. = data in for bank a, column b, etc. 3 subsequent elements of data in are applied in the programmed order following DI a-b. 3 subsequent elements of data in are applied in the programmed order following DI a-n. A non-interrupted burst is shown. Each Write command may be to any bank. Don't Care Figure 20 Write to Write: Max. DQSS, Non-Consecutive (Burst Length = 4) Data Sheet 45 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Maximum DQSS T1 CK CK Command Address Write BAa, COL b T2 T3 T4 T5 Write BAa, COL x Write BAa, COL n Write BAa, COL a Write BAa, COL g tDQSS (max) DQS DQ DM DI a-b DI a-b' DI a-x DI a-x' DI a-n DI a-n' DI a-a DI a-a' Minimum DQSS T1 CK CK Command Address Write BAa, COL b T2 T3 T4 T5 Write BAa, COL x Write BAa, COL n Write BAa, COL a Write BAa, COL g tDQSS (min) DQS DQ DM DI a-b DI a-b' DI a-x DI a-x' DI a-n DI a-n' DI a-a DI a-a' DI a-g DI a-b, etc. = data in for bank a, column b, etc. b', etc. = odd or even complement of b, etc. (i.e., column address LSB inverted). Each Write command may be to any bank. Don't Care Figure 21 Random Write Cycles (Burst Length = 2, 4 or 8) Data Sheet 46 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Maximum DQSS T1 CK CK Command Write NOP NOP NOP Read NOP T2 T3 T4 T5 T6 tWTR Address BAa, COL b BAa, COL n tDQSS (max) DQS DQ DM DI a-b CL = 2 Minimum DQSS T1 CK CK Command Write NOP NOP NOP Read NOP T2 T3 T4 T5 T6 tWTR Address BAa, COL b BAa, COL n tDQSS (min) DQS DQ DM DI a-b CL = 2 DI a-b = data in for bank a, column b. 3 subsequent elements of data in are applied in the programmed order following DI a-b. A non-interrupted burst is shown. tWTR is referenced from the first positive CK edge after the last data in pair. A10 is Low with the Write command (Auto Precharge is disabled). The Read and Write commands may be to any bank. Don't Care Figure 22 Write to Read: Non-Interrupting (CAS Latency = 2; Burst Length = 4) Data Sheet 47 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Maximum DQSS T1 CK CK Command Write NOP NOP NOP Read NOP T2 T3 T4 T5 T6 tWTR Address BAa, COL b BAa, COL n tDQSS (max) DQS DQ DM DIa- b CL = 2 1 1 Minimum DQSS T1 CK CK Command Write NOP NOP NOP Read NOP T2 T3 T4 T5 T6 tWTR Address BAa, COL b BAa, COL n tDQSS (min) DQS DQ DM DI a-b CL = 2 1 1 DI a-b = data in for bank a, column b. An interrupted burst is shown, 4 data elements are written. 3 subsequent elements of data in are applied in the programmed order following DI a-b. tWTR is referenced from the first positive CK edge after the last data in pair. The Read command masks the last 2 data elements in the burst. A10 is Low with the Write command (Auto Precharge is disabled). The Read and Write commands are not necessarily to the same bank. 1 = These bits are incorrectly written into the memory array if DM is low. Don't Care Figure 23 Write to Read: Interrupting (CAS Latency = 2; Burst Length = 8) Data Sheet 48 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description T1 CK CK Command Write T2 T3 T4 T5 T6 NOP NOP NOP Read NOP tWTR Address BAa, COL b BAa, COL n tDQSS (min) DQS DQ DM DI a-b CL = 2 1 2 2 DI a-b = data in for bank a, column b. An interrupted burst is shown, 3 data elements are written. 2 subsequent elements of data in are applied in the programmed order following DI a-b. tWTR is referenced from the first positive CK edge after the last desired data in pair (not the last desired data in element) The Read command masks the last 2 data elements in the burst. A10 is Low with the Write command (Auto Precharge is disabled). The Read and Write commands are not necessarily to the same bank. 1 = This bit is correctly written into the memory array if DM is low. Don't Care 2 = These bits are incorrectly written into the memory array if DM is low. Figure 24 Write to Read: Min. DQSS, Odd Number of Data (3-bit Write), Interrupting (CL2; BL8) Data Sheet 49 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description T1 CK CK Command Write T2 T3 T4 T5 T6 NOP NOP NOP Read NOP tWTR Address BAa, COL b BAa, COL n tDQSS (nom) DQS DQ DM DI a-b CL = 2 1 1 DI a-b = data in for bank a, column b. An interrupted burst is shown, 4 data elements are written. 3 subsequent elements of data in are applied in the programmed order following DI a-b. tWTR is referenced from the first positive CK edge after the last desired data in pair. The Read command masks the last 2 data elements in the burst. A10 is Low with the Write command (Auto Precharge is disabled). The Read and Write commands are not necessarily to the same bank. 1 = These bits are incorrectly written into the memory array if DM is low. Don't Care Figure 25 Write to Read: Nominal DQSS, Interrupting (CAS Latency = 2; Burst Length = 8) Data Sheet 50 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Maximum DQSS T1 CK CK Command Write NOP NOP NOP NOP PRE T2 T3 T4 T5 T6 tWR Address BA a, COL b BA (a or all) tDQSS (max) DQS DQ DM DI a-b tRP Minimum DQSS T1 CK CK Command Write NOP NOP NOP NOP PRE T2 T3 T4 T5 T6 tWR Address BA a, COL b BA (a or all) tDQSS (min) DQS DQ DM DI a-b tRP DI a-b = data in for bank a, column b. 3 subsequent elements of data in are applied in the programmed order following DI a-b. A non-interrupted burst is shown. tWR is referenced from the first positive CK edge after the last data in pair. A10 is Low with the Write command (Auto Precharge is disabled). Don't Care Figure 26 Write to Precharge: Non-Interrupting (Burst Length = 4) Data Sheet 51 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Maximum DQSS T1 CK CK Command Write NOP NOP NOP PRE NOP T2 T3 T4 T5 T6 tWR Address BA a, COL b BA (a or all) tDQSS (max) DQS DQ DM DI a-b 2 tRP 3 3 1 1 Minimum DQSS T1 CK CK Command Write NOP NOP NOP PRE NOP T2 T3 T4 T5 T6 tWR Address BA a, COL b BA (a or all) tDQSS (min) DQS DQ DM DI a-b 2 tRP 3 3 1 1 DI a-b = data in for bank a, column b. An interrupted burst is shown, 2 data elements are written. 1 subsequent element of data in is applied in the programmed order following DI a-b. tWR is referenced from the first positive CK edge after the last desired data in pair. The Precharge command masks the last 2 data elements in the burst, for burst length = 8. A10 is Low with the Write command (Auto Precharge is disabled). 1 = Can be don't care for programmed burst length of 4. 2 = For programmed burst length of 4, DQS becomes don't care at this point. 3 = These bits are incorrectly written into the memory array if DM is low. Don't Care Figure 27 Write to Precharge: Interrupting (Burst Length = 4 or 8) Data Sheet 52 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description T1 CK CK Command Write T2 T3 T4 T5 T6 NOP NOP NOP PRE NOP tWR Address BA a, COL b BA (a or all) tDQSS (min) DQS DQ DM DI a-b 2 tRP 3 4 4 1 1 DI a-b = data in for bank a, column b. An interrupted burst is shown, 1 data element is written. tWR is referenced from the first positive CK edge after the last desired data in pair. The Precharge command masks the last 2 data elements in the burst. A10 is Low with the Write command (Auto Precharge is disabled). 1 = Can be don't care for programmed burst length of 4. 2 = For programmed burst length of 4, DQS becomes don't care at this point. 3 = This bit is correctly written into the memory array if DM is low. 4 = These bits are incorrectly written into the memory array if DM is low. Don't Care Figure 28 Write to Precharge: Minimum DQSS, Odd Number of Data (1-bit Write), Interrupting (BL 4 or 8) Data Sheet 53 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description T1 CK CK Command Write T2 T3 T4 T5 T6 NOP NOP NOP PRE NOP tWR Address BA a, COL b BA (a or all) tDQSS (nom) DQS DQ DM DI a-b 2 tRP 3 3 1 1 DI a-b = Data In for bank a, column b. An interrupted burst is shown, 2 data elements are written. 1 subsequent element of data in is applied in the programmed order following DI a-b. tWR is referenced from the first positive CK edge after the last desired data in pair. The Precharge command masks the last 2 data elements in the burst. A10 is Low with the Write command (Auto Precharge is disabled). 1 = Can be don't care for programmed burst length of 4. 2 = For programmed burst length of 4, DQS becomes don't care at this point. 3 = These bits are incorrectly written into the memory array if DM is low. Don't Care Figure 29 Write to Precharge: Nominal DQSS (2-bit Write), Interrupting (Burst Length = 4 or 8) Data Sheet 54 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.5.4 Precharge The Precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access some specified time (tRP) after the Precharge command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are treated as "Don't Care". Once a bank has been precharged, it is in the idle state and must be activated prior to any Read or Write commands being issued to that bank. CK CK CKE CS RAS CAS WE A0-A9, A11, A12 All Banks A10 BA0, BA1 One Bank BA BA = bank address (if A10 is Low, otherwise Don't Care). Don't Care HIGH Figure 30 Precharge Command Data Sheet 55 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.5.5 Power-Down Power-down is entered when CKE is registered LOW (no accesses can be in progress). If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CK, CK and CKE. The DLL is still running in Power Down mode, so for maximum power savings, the user has the option of disabling the DLL prior to entering Power-down. In that case, the DLL must be enabled after exiting power-down, and 200 clock cycles must occur before a Read command can be issued. In power-down mode, CKE Low and a stable clock signal must be maintained at the inputs of the DDR SDRAM, and all other input signals are "Don't Care". However, power-down duration is limited by the refresh requirements of the device, so in most applications, the self refresh mode is preferred over the DLL-disabled power-down mode. The power-down state is synchronously exited when CKE is registered HIGH (along with a NOP or Deselect command). A valid, executable command may be applied one clock cycle later. CK CK CKE Command tIS tIS VALID No column access in progress NOP NOP Exit power down mode VALID Enter Power Down mode (Burst Read or Write operation must not be in progress) Don't Care Figure 31 Power Down Data Sheet 56 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Table 10 Truth Table 2: Clock Enable (CKE) CKEn Current Cycle L H L H L L L H X Deselect or NOP X Deselect or NOP Deselect or NOP AUTO REFRESH Deselect or NOP See Table 11 Maintain Self-Refresh Exit Self-Refresh Maintain Power-Down Exit Power-Down Self Refresh Entry Active Power-Down Entry - 1) 2) Current State CKE n-1 Previous Cycle Self Refresh Self Refresh Power Down Power Down All Banks Idle All Banks Idle L L L L H H H 1) Command n Action n Notes - - - - - Precharge Power-Down Entry - Bank(s) Active H VREF must be maintained during Self Refresh operation 2) Deselect or NOP commands should be issued on any clock edges occurring during the Self Refresh Exit (tXSNR) period. A minimum of 200 clock cycles are needed before applying a read command to allow the DLL to lock to the input clock. Note: 1. 2. 3. 4. CKEn is the logic state of CKE at clock edge n: CKE n-1 was the state of CKE at the previous clock edge. Current state is the state of the DDR SDRAM immediately prior to clock edge n. COMMAND n is the command registered at clock edge n, and ACTION n is a result of COMMAND n. All states and sequences not shown are illegal or reserved. Truth Table 3: Current State Bank n - Command to Bank n (same bank) RAS CAS WE X H L L L H H L H L H H H L X H H L L L L H L H H L L H X H H H L H L L H L L H L L Command Deselect No Operation Active AUTO REFRESH MODE REGISTER SET Read Write Precharge Read Precharge BURST TERMINATE Read Write Precharge Action NOP. Continue previous operation. NOP. Continue previous operation. Select and activate row - - Select column and start Read burst Select column and start Write burst Deactivate row in bank(s) Select column and start new Read burst Truncate Read burst, start Precharge BURST TERMINATE Select column and start Read burst Select column and start Write burst Truncate Write burst, start Precharge Notes 1)2)3)4)5)6) 1) to 6) 1) to 6) 1) to 7) 1) to 7) Table 11 Any Idle Current State CS H L L L L Row Active L L L Read (Auto Precharge Disabled) L L L Write (Auto Precharge Disabled) L L L 1) to 6), 8) 1) to 6), 8) 1) to 6), 9) 1) to 6), 8) 1) to 6), 9) 1) to 6), 10) 1) to 6), 8), 11) 1) to 6), 8) 1) to 6), 9), 11) 1) This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Table 10 and after tXSNR/tXSRD has been met (if the previous state was self refresh). 2) This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below. Data Sheet 57 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3) Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. Write: A Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. 4) The following states must not be interrupted by a command issued to the same bank. Precharging: Starts with registration of a Precharge command and ends when tRP is met. Once tRP is met, the bank is in the idle state. Row Activating: Starts with registration of an Active command and ends when tRCD is met. Once tRCD is met, the bank is in the "row active" state. Read w/Auto Precharge Enabled: Starts with registration of a Read command with Auto Precharge enabled and ends when tRP has been met. Once tRP is met, the bank is in the idle state. Write w/Auto Precharge Enabled: Starts with registration of a Write command with Auto Precharge enabled and ends when tRP has been met. Once tRP is met, the bank is in the idle state. Deselect or NOP commands, or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and according to Table 12. 5) The following states must not be interrupted by any executable command; Deselect or NOP commands must be applied on each positive clock edge during these states. Refreshing: Starts with registration of an Auto Refresh command and ends when tRFC is met. Once tRFC is met, the DDR SDRAM is in the "all banks idle" state. Accessing Mode Register: Starts with registration of a Mode Register Set command and ends when tMRD has been met. Once tMRD is met, the DDR SDRAM is in the "all banks idle" state. Precharging All: Starts with registration of a Precharge All command and ends when tRP is met. Once tRP is met, all banks is in the idle state. 6) All states and sequences not shown are illegal or reserved. 7) Not bank-specific; requires that all banks are idle. 8) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads or Writes with Auto Precharge disabled. 9) May or may not be bank-specific; if all/any banks are to be precharged, all/any must be in a valid state for precharging. 10) Not bank-specific; BURST TERMINATE affects the most recent Read burst, regardless of bank. 11) Requires appropriate DM masking. Data Sheet 58 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description Table 12 Any Idle Truth Table 4: Current State Bank n - Command to Bank m (different bank) CS H L X RAS CAS WE X H X X H X X H X Command Deselect No Operation Any Command Otherwise Allowed to Bank m Active Read Write Precharge Active Read Precharge Active Read Write Precharge Active Read Write Precharge Active Read Write Precharge Action NOP. Continue previous operation. NOP. Continue previous operation. - Notes 1)2)3)4)5)6) 1) to 6) 1) to 6) Current State Row Activating, Active, or Precharging L L L L L L L L H H L L H L L H H L L H H L L H H L H L L H H L H H L L H H L L H H L L H H H L L H H L H H L L H H L L H H L L Select and activate row Select column and start Read burst Select column and start Write burst - Select and activate row Select column and start new Read burst - Select and activate row Select column and start Read burst Select column and start new Write burst - Select and activate row Select column and start new Read burst Select column and start Write burst - Select and activate row Select column and start Read burst Select column and start new Write burst - 1) to 6) 1) to 7) 1) to 7) 1) to 6) 1) to 6) 1) to 7) Read (Auto Precharge Disabled) Write (Auto Precharge Disabled) 1) to 6) 1) to 6) 1) to 8) 1) to 7) L L L L 1) to 6) 1) to 6) 1) to 7), 9) Read (With Auto L Precharge) L L L Write (With Auto L Precharge) L L L 1) to 7), 9), 10) 1) to 6) 1) to 6) 1) to 7), 9) 1) to 7), 9) 1) to 6) 1) This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Table 10: Clock Enable (CKE) and after tXSNR/tXSRD has been met (if the previous state was self refresh). 2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in the notes below. 3) Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. Write: A Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. Read with Auto Precharge Enabled: See 10). Write with Auto Precharge Enabled: See 10). 4) AUTO REFRESH and Mode Register Set commands may only be issued when all banks are idle. 5) A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only. 6) All states and sequences not shown are illegal or reserved. Data Sheet 59 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 7) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads or Writes with Auto Precharge disabled. 8) Requires appropriate DM masking. 9) Concurrent Auto Precharge: This device supports "Concurrent Auto Precharge". When a read with auto precharge or a write with auto precharge is enabled any command may follow to the other banks as long as that command does not interrupt the read or write data transfer and all other limitations apply (e.g. contention between READ data and WRITE data must be avoided). The minimum delay from a read or write command with auto precharge enable, to a command to a different banks is summarized in Table 13. 10) A Write command may be applied after the completion of data output. Table 13 Truth Table 5: Concurrent Auto Precharge To Command (different bank) Read or Read w/AP Write to Write w/AP Precharge or Activate Minimum Delay with Concurrent Auto Precharge Support 1 + (BL/2) + tWTR BL/2 1 BL/2 CL (rounded up) + BL/2 1 Unit From Command WRITE w/AP Read w/AP Read or Read w/AP Write or Write w/AP Precharge or Activate tCK tCK tCK tCK tCK tCK 3.5.6 Input Clock Frequency Change DDR SDRAM Input clock frequency cannot be changed during normal operation. Clock frequency change is only permitted during Self Refresh or during Power Down. In the latter case the following conditions must be met: DDR SDRAM must be in pre charged mode with CKE at logic Low level. After a minimum of 2 clocks after CKE goes LOW, the clock frequency may change to any frequency between minimum and maximum operating frequeny specified for the particular speed grade. During an input clock frequency change, CKE must be held LOW. Once the input clock frequency is changed, a stable clock must be provided to DRAM before pre charge power down mode may be exited. The DLL must be RESET via EMRS after pre charge power down exit. An additional MRS command may need to be issued to appropriately set CL etc.. After the DLL relock time, the DRAM is ready to operate with the new clock frequency. 7 &/. &/. 7 7 7 7[ 7[ 7\ 7\ 7\ 7\ 7\ 7] 6WDEOH QHZ FORFN EHIRU SRZHU GRZQ H[LW &RP 123 123 W,6 &.( W53 123 '// 5(6(7 123 123 9DOLG )UHTXHQF\ &KDQJH 2FFXUV KHUH &ORFNV 0LQLPXP FORFNV UHTXLUHG EHIRU FKDQJLQJ IUHTXHQR\ Figure 32 Clock frequency change in pre charge power down mode Data Sheet 60 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Functional Description 3.6 Simplified State Diagram Power Applied Power On Precharge PREALL Self Refresh REFS REFSX MRS EMRS MRS Idle REFA Auto Refresh CKEH CKEL Active Power Down CKEH CKEL ACT Precharge Power Down Write Write A Write Row Active Burst Stop Read Read A Read Read Write A Read A PRE Read A Write A PRE PRE Read A PRE Precharge PREALL Automatic Sequence Command Sequence PREALL = Precharge All Banks MRS = Mode Register Set EMRS = Extended Mode Register Set REFS = Enter Self Refresh REFSX = Exit Self Refresh REFA = Auto Refresh CKEL = Enter Power Down CKEH = Exit Power Down ACT = Active Write A = Write with Autoprecharge Read A = Read with Autoprecharge PRE = Precharge Figure 33 Simplified State Diagram Data Sheet 61 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics 4 4.1 Table 14 Parameter Electrical Characteristics Operating Conditions Absolute Maximum Ratings Symbol Values min. typ. max. -0.5 - -1 -1 -1 0 -55 - - - - - - - 1.5 50 Unit Note/ Test Condition - - - - - - - - Voltage on I/O pins relative to VSS Voltage on inputs relative to VSS Voltage on VDD supply relative to VSS Voltage on VDDQ supply relative to VSS Operating temperature (ambient) Storage temperature (plastic) Power dissipation (per SDRAM component) Short circuit output current VIN, VOUT VIN VDD VDDQ TA TSTG PD IOUT VDDQ+0.5 V +3.6 +3.6 +3.6 +70 +150 - - V V V C C W mA Attention: Permanent damage to the device may occur if "Absolute Maximum Ratings" are exceeded. This is a stress rating only, and functional operation should be restricted to recommended operation conditions. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability and exceeding only one of the values may cause irreversible damage to the integrated circuit. Table 15 Parameter Input and Output Capacitances Symbol Min. Values Typ. -- -- -- -- -- -- -- -- -- Max. 2.5 3.0 0.25 2.5 3.0 0.5 4.5 5.0 0.5 pF pF pF pF pF pF pF pF pF 1.5 2.0 -- 1.5 2.0 -- 3.5 4.0 Unit Note/ Test Condition P-TFBGA-60-12 1) P-TSOPII-66 1) 1) Input Capacitance: CK, CK Delta Input Capacitance Input Capacitance: All other input-only pins Delta Input Capacitance: All other input-only pins CI1 CdI1 CI2 CdIO P-TFBGA-60-12 1) P-TSOPII-66 1) 1) Input/Output Capacitance: DQ, DQS, DM CIO P-TFBGA-60-12 1)2) P-TSOPII-66 1)2) 1) Delta Input/Output Capacitance: DQ, DQS, DM CdIO -- 1) These values are not subject to production test - verified by design/characterization and are tested on a sample base only. VDDQ = VDD = 2.5 V 0.2 V, f = 100 MHz, TA = 25 xC, VOUT(DC) = VDDQ/2, VOUT (Peak to Peak) 0.2 V. Unused pins are tied to ground. 2) DM inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace matching at the board level. Data Sheet 62 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics Table 16 Parameter Electrical Characteristics and DC Operating Conditions Symbol Min. 2.3 2.5 2.3 2.5 0 0.49 x 0.5 x Values Typ. 2.5 2.6 2.5 2.6 Max. 2.7 2.7 2.7 2.7 0 0.51 x V V V V V V Unit Note/Test Condition 1) VDD Device Supply Voltage VDD Output Supply Voltage VDDQ Output Supply Voltage VDDQ Supply Voltage, I/O Supply VSS, Voltage VSSQ VREF Input Reference Voltage Device Supply Voltage I/O Termination Voltage (System) fCK 166 MHz fCK > 166 MHz 2) fCK 166 MHz 3) fCK > 166 MHz 2)3) -- 4) 5) 8) 8) 8) 8)6) 7) VTT VDDQ VDDQ VREF - 0.04 VREF + 0.15 -0.3 -0.3 0.36 0.71 VDDQ VREF + 0.04 V VDDQ + 0.3 V VREF - 0.15 V VDDQ + 0.3 V VDDQ + 0.6 V 1.4 -- Input High (Logic1) Voltage VIH(DC) Input Low (Logic0) Voltage VIL(DC) Input Voltage Level, CK and CK Inputs Input Differential Voltage, CK and CK Inputs VI-Matching Pull-up Current to Pull-down Current Input Leakage Current VIN(DC) VID(DC) VIRatio II IOZ IOH IOL -2 2 A Any input 0 V VIN VDD; All other pins not under test = 0 V 8)9) DQs are disabled; 0 V VOUT VDDQ Output Leakage Current Output High Current, Normal Strength Driver Output Low Current, Normal Strength Driver 1) 0 C TA 70 C -5 -- 16.2 5 -16.2 -- A mA mA VOUT = 1.95 V VOUT = 0.35 V 2) DDR400 conditions apply for all clock frequencies above 166 MHz 3) Under all conditions, VDDQ must be less than or equal to VDD. 4) Peak to peak AC noise on VREF may not exceed 2% VREF (DC). VREF is also expected to track noise variations in VDDQ. 5) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF. 6) VID is the magnitude of the difference between the input level on CK and the input level on CK. 7) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process variation. 8) Inputs are not recognized as valid until VREF stabilizes. 9) Values are shown per component Data Sheet 63 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics 4.2 Normal Strength Pull-down and Pull-up Characteristics 1. The nominal pull-down V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve. 2. The full variation in driver pull-down current from minimum to maximum process, temperature, and voltage lie within the outer bounding lines of the V-I curve. 3. The nominal pull-up V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve. 4. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie within the outer bounding lines of the V-I curve. 5. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7, for device drain to source voltages from 0.1 to 1.0. 6. The full variation in the ratio of the nominal pull-up to pull-down current should be unity 10%, for device drain to source voltages from 0.1 to 1.0 V. 140 120 Maximum Nominal High Nominal Low Minimum IOUT (mA) 100 80 60 40 20 0 0 0.5 1 1.5 2 2.5 VDDQ - VOUT (V) Figure 34 Normal Strength Pull-down Characteristics 0 -20 -40 -60 -80 -100 -120 -140 -160 0 0.5 1 Nominal High Maximum Minimum Nominal Low IOUT (mA) VDDQ - VOUT (V) 1.5 2 2.5 Figure 35 Normal Strength Pull-up Characteristics Data Sheet 64 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics Table 17 Voltage (V) Nominal Low 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Table 18 Parameter Operating Temperature 6.0 12.2 18.1 24.1 29.8 34.6 39.4 43.7 47.5 51.3 54.1 56.2 57.9 59.3 60.1 60.5 61.0 61.5 62.0 62.5 62.9 63.3 63.8 64.1 64.6 64.8 65.0 Normal Strength Pull-down and Pull-up Currents Pulldown Current (mA) Nominal High 6.8 13.5 20.1 26.6 33.0 39.1 44.2 49.8 55.2 60.3 65.2 69.9 74.2 78.4 82.3 85.9 89.1 92.2 95.3 97.2 99.1 100.9 101.9 102.8 103.8 104.6 105.4 Min. 4.6 9.2 13.8 18.4 23.0 27.7 32.2 36.8 39.6 42.6 44.8 46.2 47.1 47.4 47.7 48.0 48.4 48.9 49.1 49.4 49.6 49.8 49.9 50.0 50.2 50.4 50.5 Max. 9.6 18.2 26.0 33.9 41.8 49.4 56.8 63.2 69.9 76.3 82.5 88.3 93.8 99.1 103.8 108.4 112.1 115.9 119.6 123.3 126.5 129.5 132.4 135.0 137.3 139.2 140.8 Nominal Low -6.1 -12.2 -18.1 -24.0 -29.8 -34.3 -38.1 -41.1 -43.8 -46.0 -47.8 -49.2 -50.0 -50.5 -50.7 -51.0 -51.1 -51.3 -51.5 -51.6 -51.8 -52.0 -52.2 -52.3 -52.5 -52.7 -52.8 Pullup Current (mA) Nominal High -7.6 -14.5 -21.2 -27.7 -34.1 -40.5 -46.9 -53.1 -59.4 -65.5 -71.6 -77.6 -83.6 -89.7 -95.5 -101.3 -107.1 -112.4 -118.7 -124.0 -129.3 -134.6 -139.9 -145.2 -150.5 -155.3 -160.1 Min. -4.6 -9.2 -13.8 -18.4 -23.0 -27.7 -32.2 -36.0 -38.2 -38.7 -39.0 -39.2 -39.4 -39.6 -39.9 -40.1 -40.2 -40.3 -40.4 -40.5 -40.6 -40.7 -40.8 -40.9 -41.0 -41.1 -41.2 Max. -10.0 -20.0 -29.8 -38.8 -46.8 -54.4 -61.8 -69.5 -77.3 -85.2 -93.0 -100.6 -108.1 -115.5 -123.0 -130.4 -136.7 -144.2 -150.5 -156.9 -163.2 -169.6 -176.0 -181.3 -187.6 -192.9 -198.2 Evaluation Conditions for I/O Driver Characteristics Nominal 25 C 2.5 V typical Minimum 0 C 2.3 V slow-slow Maximum 70 C 2.7 V fast-fast VDD/VDDQ Process Corner Data Sheet 65 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics 4.3 Weak Strength Pull-down and Pull-up Characteristics 1. The weak pull-down V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve. 2. The weak pull-up V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve. 3. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie within the outer bounding lines of the V-I curve. 4. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7, for device drain to source voltages from 0.1 to 1.0. 5. The full variation in the ratio of the nominal pull-up to pull-down current should be unity 10%, for device drain to source voltages from 0.1 to 1.0 V. 8 0 7 0 6 0 Mi u am xm Tp ah h yi l i cg Tp al w yi l o c Mi u im nm I u[ A ot m ] 5 0 4 0 3 0 2 0 1 0 0 0 , 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 Vu[ ] ot V Figure 36 Weak Strength Pull-down Characteristics 0 , 0 0 , 0 -0 1, 0 -0 2, 0 0 , 5 1 , 0 1 , 5 2 , 0 2 , 5 Mi u im nm I u[ ] ot V -0 3, 0 -0 4, 0 -0 5, 0 -0 6, 0 -0 7, 0 -0 8, 0 Tp al w yi l o c Tp ah h yi l i cg Mi u am xm Vu[ ] ot V Figure 37 Weak Strength Pull-up Characteristics Data Sheet 66 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics Table 19 Voltage (V) Weak Strength Driver Pull-down and Pull-up Characteristics Pulldown Current (mA) Nominal Low Nominal High 3.8 7.6 11.4 15.1 18.7 22.1 25.0 28.2 31.3 34.1 36.9 39.5 42.0 44.4 46.6 48.6 50.5 52.2 53.9 55.0 56.1 57.1 57.7 58.2 58.7 59.2 59.6 Min. 2.6 5.2 7.8 10.4 13.0 15.7 18.2 20.8 22.4 24.1 25.4 26.2 26.6 26.8 27.0 27.2 27.4 27.7 27.8 28.0 28.1 28.2 28.3 28.3 28.4 28.5 28.6 Max. 5.0 9.9 14.6 19.2 23.6 28.0 32.2 35.8 39.5 43.2 46.7 50.0 53.1 56.1 58.7 61.4 63.5 65.6 67.7 69.8 71.6 73.3 74.9 76.4 77.7 78.8 79.7 Nominal Low -3.5 -6.9 -10.3 -13.6 -16.9 -19.4 -21.5 -23.3 -24.8 -26.0 -27.1 -27.8 -28.3 -28.6 -28.7 -28.9 -28.9 -29.0 -29.2 -29.2 -29.3 -29.5 -29.5 -29.6 -29.7 -29.8 -29.9 Pullup Current (mA) Nominal High -4.3 -8.2 -12.0 -15.7 -19.3 -22.9 -26.5 -30.1 -33.6 -37.1 -40.3 -43.1 -45.8 -48.4 -50.7 -52.9 -55.0 -56.8 -58.7 -60.0 -61.2 -62.4 -63.1 -63.8 -64.4 -65.1 -65.8 Min. -2.6 -5.2 -7.8 -10.4 -13.0 -15.7 -18.2 -20.4 -21.6 -21.9 -22.1 -22.2 -22.3 -22.4 -22.6 -22.7 -22.7 -22.8 -22.9 -22.9 -23.0 -23.0 -23.1 -23.2 -23.2 -23.3 -23.3 Max. -5.0 -9.9 -14.6 -19.2 -23.6 -28.0 -32.2 -35.8 -39.5 -43.2 -46.7 -50.0 -53.1 -56.1 -58.7 -61.4 -63.5 -65.6 -67.7 -69.8 -71.6 -73.3 -74.9 -76.4 -77.7 -78.8 -79.7 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 3.4 6.9 10.3 13.6 16.9 19.6 22.3 24.7 26.9 29.0 30.6 31.8 32.8 33.5 34.0 34.3 34.5 34.8 35.1 35.4 35.6 35.8 36.1 36.3 36.5 36.7 36.8 Data Sheet 67 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics 4.4 AC Characteristics (Notes 1-5 apply to the following Tables; Electrical Characteristics and DC Operating Conditions, AC Operating Conditions, IDD Specifications and Conditions, and Electrical Characteristics and AC Timing.) Notes 1. All voltages referenced to VSS. 2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/ supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. Figure 38 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics). 4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK, CK), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals is 1 V/ ns in the range between VIL(AC) and VIH(AC). 5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver effectively switches as a result of the signal crossing the AC input level, and remains in that state as long as the signal does not ring back above (below) the DC input LOW (HIGH) level). 6. For System Characteristics like Setup & Holdtime Derating for Slew Rate, I/O Delta Rise/Fall Derating, DDR SDRAM Slew Rate Standards, Overshoot & Undershoot specification and Clamp V-I characteristics see the latest JEDEC specification for DDR components. VTT 50 Output (VOUT) Timing Reference Point 30 pF Figure 38 AC Output Load Circuit Diagram / Timing Reference Load Data Sheet 68 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics Table 20 Parameter AC Operating Conditions1) Symbol Min. Input High (Logic 1) Voltage, DQ, DQS and DM Signals Input Low (Logic 0) Voltage, DQ, DQS and DM Signals Input Differential Voltage, CK and CK Inputs Input Closing Point Voltage, CK and CK Inputs Values Max. Unit Note/ Test Condition V V V V 2)3) 2)3) 2)3)4) 2)3)5) VIH(AC) VIL(AC) VID(AC) VIX(AC) VREF + 0.31 -- -- VREF - 0.31 0.7 VDDQ + 0.6 0.5 x VDDQ 0.5 x VDDQ - 0.2 + 0.2 1) VDDQ = 2.5 V 0.2 V, VDD = +2.5 V 0.2 V (DDR200 - DDR333); VDDQ = 2.6 V 0.1 V, VDD = +2.6 V 0.1 V (DDR400); 0 C TA 70 C 2) Input slew rate = 1 V/ns. 3) Inputs are not recognized as valid until VREF stabilizes. 4) VID is the magnitude of the difference between the input level on CK and the input level on CK. 5) The value of VIX is expected to equal 0.5 x VDDQ of the transmitting device and must track variations in the DC level of the same. Table 21 Parameter AC Timing - Absolute Specifications for PC3200 and PC2700 Symbol -5 DDR400B Min. Max. +0.5 0.55 8 12 12 0.55 -6 DDR333 Min. -0.7 0.45 6 6 7.5 0.45 Max. +0.7 0.55 12 12 12 0.55 ns 2)3)4)5) 2)3)4)5) Unit Note/ Test Condition 1) DQ output access time from CK/CK CK high-level width Clock cycle time tAC tCH tCK -0.5 0.45 5 6 7.5 tCK ns ns ns CL = 3.0 2)3)4)5) 2)3)4)5) 2)3)4)5) CL = 2.5 CL = 2.0 tCL Auto precharge write recovery tDAL CK low-level width + precharge time DQ and DM input hold time DQ and DM input pulse width (each input) DQS output access time from CK/CK DQS input low (high) pulse width (write cycle) DQS-DQ skew (DQS and associated DQ signals) 0.45 (tWR/tCK)+(tRP/tCK) 0.4 1.75 -0.6 -- -- +0.6 -- +0.40 +0.40 1.25 -- 0.45 1.75 -0.6 0.35 -- -- 0.75 0.45 -- -- +0.6 -- +0.40 +0.45 1.25 -- tCK tCK ns ns ns 2)3)4)5) 2)3)4)5)6) 2)3)4)5) 2)3)4)5)6) 2)3)4)5) 2)3)4)5) tDH tDIPW tDQSCK tDQSL,H 0.35 tDQSQ -- -- tCK ns ns 2)3)4)5) 2)3)4)5) TFBGA TSOPII Write command to 1st DQS latching transition DQ and DM input setup time tDQSS tDS 0.72 0.4 tCK ns 2)3)4)5) 2)3)4)5) Data Sheet 69 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics Table 21 Parameter AC Timing - Absolute Specifications for PC3200 and PC2700 Symbol -5 DDR400B Min. DQS falling edge hold time from CK (write cycle) DQS falling edge to CK setup time (write cycle) Clock Half Period from CK/CK Max. -- -- -6 DDR333 Min. 0.2 0.2 Max. -- -- Unit Note/ Test Condition 1) tDSH tDSS 0.2 0.2 tCK tCK ns ns ns ns ns ns ns ns 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5)7) tHP Data-out high-impedance time tHZ Address and control input hold tIH time min. (tCL, tCH) -- -- 0.6 0.7 +0.7 -- -- -- -- -- +0.70 -- -- +0.50 +0.50 -- 70E+3 -- -- 7.8 -- -- 1.1 0.60 -- -- -- min. (tCL, tCH) -- -0.7 0.75 0.8 2.2 0.75 0.8 -0.70 2 +0.7 -- -- -- -- -- +0.70 -- -- +0.50 +0.55 -- -- -- 7.8 -- -- 1.1 0.60 -- -- -- fast slew rate 3)4)5)6)8) slow slew rate3)4)5)6)8) 2)3)4)5)9) Control and Addr. input pulse width (each input) Address and control input setup time tIPW tIS 2.2 0.6 0.7 fast slew rate 3)4)5)6)8) slow slew rate3)4)5)6)8) 2)3)4)5)7) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5)8) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5)10) Data-out low-impedance time from CK/CK Mode register set command cycle time DQ/DQS output hold time Data hold skew factor tLZ tMRD tQH tQHS -0.7 2 tCK ns ns ns ns ns ns s ns ns tHP -tQHS -- -- tHP -tQHS -- -- TFBGA TSOPII Active to Autoprecharge delay tRAP Active to Precharge command tRAS Active to Active/Auto-refresh command period Active to Read or Write delay Average Periodic Refresh Interval Auto-refresh to Active/Autorefresh command period Precharge command period tRCD 40 55 15 -- 70 15 0.9 0.40 10 0.25 0 tRCD 42 60 18 -- 72 18 0.9 0.40 12 0.25 0 70E+3 ns tRC tRCD tREFI tRFC tRP Read preamble tRPRE Read postamble tRPST Active bank A to Active bank B tRRD command Write preamble Write preamble setup time tCK tCK ns tWPRE tWPRES tCK ns Data Sheet 70 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics Table 21 Parameter AC Timing - Absolute Specifications for PC3200 and PC2700 Symbol -5 DDR400B Min. Write postamble Max. 0.60 -- -- -- -- -6 DDR333 Min. 0.40 15 1 75 200 Max. 0.60 -- -- -- -- Unit Note/ Test Condition 1) tWPST Write recovery time tWR Internal write to read command tWTR delay Exit self-refresh to non-read command Exit self-refresh to read command 0.40 15 2 75 200 tCK ns 2)3)4)5)11) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) tCK ns tXSNR tXSRD tCK 1) 0 C TA 70 C; VDDQ = 2.5 V 0.2 V, VDD = +2.5 V 0.2 V (DDR333); VDDQ = 2.6 V 0.1 V, VDD = +2.6 V 0.1 V (DDR400) 2) Input slew rate 1 V/ns for DDR400, DDR333 3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals other than CK/CK, is VREF. CK/CK slew rate are 1.0 V/ns. 4) Inputs are not recognized as valid until VREF stabilizes. 5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT. 6) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time. 7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ). 8) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ ns, measured between VIH(ac) and VIL(ac). 9) These parameters guarantee device timing, but they are not necessarily tested on each device. 10) The specific requirement is that DQS be valid (HIGH,LOW, or some point on a valid transition) on or before this CK edge. A valid transition is defined as monotonic and meeting the input slew rate specificationsof the device. When no writes were previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW at this time, depending on tDQSS. 11) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system performance (bus turnaround) degrades accordingly. Table 22 Parameter AC Timing - Absolute Specifications for PC2700 Symbol -7 DDR266A Min. Max. +0.75 0.55 12 12 12 0.55 ns 2)3)4)5) 2)3)4)5) Unit Note/Test Condition 1) DQ output access time from CK/CK CK high-level width Clock cycle time tAC tCH tCK -0.75 0.45 7.5 7.5 7.5 tCK ns ns ns CL = 3.03)4)5) CL = 2.52)3)4)5) CL = 2.02)3)4)5) 2)3)4)5) 2)3)4)5)6) 2)3)4)5) 2)3)4)5)6) CK low-level width Auto precharge write recovery + precharge time DQ and DM input hold time DQ and DM input pulse width (each input) Data Sheet tCL tDAL tDH tDIPW 0.45 (tWR/tCK)+(tRP/tCK) -- 0.5 1.75 71 -- -- tCK tCK ns ns Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics Table 22 Parameter AC Timing - Absolute Specifications for PC2700 (cont'd) Symbol -7 DDR266A Min. DQS output access time from CK/CK Max. +0.75 -- +0.5 +0.5 1.25 -- -- -- -- +0.75 -- -- -- -- -- +0.75 -- 0.75 0.75 -- 120E+3 -- -- -- -- -- 1.1 0.6 -- -- -- ns 2)3)4)5) 2)3)4)5) Unit Note/Test Condition 1) tDQSCK -0.75 DQS input low (high) pulse width (write cycle) tDQSL,H 0.35 DQS-DQ skew (DQS and associated DQ tDQSQ -- signals) -- 0.75 0.5 0.2 0.2 min. (tCL, tCH) -0.75 0.9 1.0 Control and Addr. input pulse width (each input) Address and control input setup time Write command to 1st DQS latching transition tDQSS DQ and DM input setup time tDS DQS falling edge hold time from CK (write cycle) DQS falling edge to CK setup time (write cycle) Clock Half Period Data-out high-impedance time from CK/CK Address and control input hold time tCK ns ns FBGA2)3)4)5) TSOPII 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5)7) tCK ns tDSH tDSS tHP tHZ tIH tCK tCK ns ns ns ns ns ns ns ns fast slew rate 3)4)5)6)8) 3)4)5)6)8) 2)3)4)5)9) slow slew rate tIPW tIS 2.2 0.9 1.0 fast slew rate 3)4)5)6)8) 3)4)5)6)8) 2)3)4)5)7) 2)3)4)5) 2)3)4)5) slow slew rate Data-out low-impedance time from CK/CK Mode register set command cycle time DQ/DQS output hold time Data hold skew factor Active to Read w/AP delay Active to Precharge command Active to Active/Auto-refresh command period Active to Read or Write delay Average Periodic Refresh Interval Auto-refresh to Active/Auto-refresh command period Precharge command period Read preamble Read postamble Active bank A to Active bank B command Write preamble Write preamble setup time Data Sheet tLZ tMRD tQH tQHS tRAP tRAS tRC tRCD tREFI tRFC tRP tRPRE tRPST tRRD tWPRE tWPRES -0.75 2 tCK ns ns ns ns ns ns ns s ns ns tHP - tQHS -- -- FBGA2)3)4)5) TSOPII2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5)10) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5) 2)3)4)5)11) tRCD 45 65 20 7.8 75 20 0.9 0.4 15 0.25 0 72 tCK tCK ns tCK ns Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics Table 22 Parameter AC Timing - Absolute Specifications for PC2700 (cont'd) Symbol -7 DDR266A Min. Write postamble Write recovery time Internal write to read command delay Exit self-refresh to non-read command Exit self-refresh to read command 2) Input slew rate 1 V/ns 3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals other than CK/CK, is VREF. CK/CK slew rate are 1.0 V/ns. 4) Inputs are not recognized as valid until VREF stabilizes. 5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT. 6) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time. 7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ). 8) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ ns, measured between VIH(ac) and VIL(ac). 9) These parameters guarantee device timing, but they are not necessarily tested on each device. 10) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device. 11) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge. A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 12) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system performance (bus turnaround) degrades accordingly. 13) In all circumstances, tXSNR can be satisfied using tXSNR = tRFC,min + 1 x tCK Unit Max. -- -- -- -- Note/Test Condition 1) 2)3)4)5)12) 2)3)4)5) 2)3)4)5) 2)3)4)5)13) 2)3)4)5) tWPST tWR tWTR tXSNR tXSRD 0.4 15 1 75 200 tCK ns tCK ns tCK 1) VDDQ = 2.5 V 0.2 V, VDD = +2.5 V 0.2 V ; 0 C TA 70 C Data Sheet 73 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics Table 23 Parameter IDD Conditions Symbol Operating Current: one bank; active/ precharge; tRC = tRCMIN; tCK = tCKMIN; DQ, DM, and DQS inputs changing once per clock cycle; address and control inputs changing once every two clock cycles. Operating Current: one bank; active/read/precharge; Burst = 4; Refer to the following page for detailed test conditions. Precharge Power-Down Standby Current: all banks idle; power-down mode; CKE VILMAX; tCK = IDD0 IDD1 IDD2P tCKMIN Precharge Floating Standby Current: CS VIHMIN, all banks idle; IDD2F CKE VIHMIN; tCK = tCKMIN, address and other control inputs changing once per clock cycle, VIN = VREF for DQ, DQS and DM. Precharge Quiet Standby Current: CS VIHMIN, all banks idle; CKE VIHMIN; tCK = tCKMIN, address and other control inputs stable at VIHMIN or VILMAX; VIN = VREF for DQ, DQS and DM. Active Power-Down Standby Current: one bank active; power-down mode; CKE VILMAX; tCK = tCKMIN; VIN = VREF for DQ, DQS and DM. IDD2Q IDD3P Active Standby Current: one bank active; CS VIHMIN; CKE VIHMIN; tRC = tRASMAX; tCK = tCKMIN; IDD3N DQ, DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle. Operating Current: one bank active; Burst = 2; reads; continuous burst; address and control inputs IDD4R changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR200 and DDR266A, CL = 3 for DDR333; tCK = tCKMIN; IOUT = 0 mA Operating Current: one bank active; Burst = 2; writes; continuous burst; address and control inputs IDD4W changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR200 and DDR266A, CL = 3 for DDR333; tCK = tCKMIN Auto-Refresh Current: tRC = tRFCMIN, burst refresh Self-Refresh Current: CKE 0.2 V; external clock on; tCK = tCKMIN Operating Current: four bank; four bank interleaving with BL = 4; Refer to the following page for detailed test conditions. IDD5 IDD6 IDD7 Data Sheet 74 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics Table 24 Symbol -5 IDD Specification -6 DDR333 Max. 90 90 100 110 5 36 28 18 45 54 100 120 105 130 190 2.8 -- 250 250 Typ. 60 65 70 80 4 25 17 11 32 36 70 85 75 90 120 1.4 1.0 180 180 Max. 75 75 85 95 5 30 24 15 38 45 85 100 90 110 160 2.8 1.1 215 215 -7 DDR266A Typ. 50 55 65 70 3 20 15 9 28 30 60 70 65 75 100 1.4 -- 140 140 Max. 65 65 75 85 4 24 21 13 36 40 70 85 75 90 140 2.8 -- 170 170 mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA x4/x8 2)3) x16 3) x4/x8 3) x16 3) 3) 3) 3) 3) 3) Unit Note/Test Condition1) DDR400B Typ. IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 IDD7 70 75 80 95 4 30 20 13 38 43 85 100 90 100 140 1.4 -- 210 210 x16 3) x4/x8 3) x16 3) x4/x8 3) x16 3) 3) 4) low power 5) x4/x8 3) x16 3) 1) Test conditions for typical values: VDD = 2.5 V (DDR333), VDD = 2.6 V (DDR400), TA = 25 C, test conditions for maximum values: VDD = 2.7 V, TA = 10 C 2) IDD specifications are tested after the device is properly initialized and measured at 133 MHz for DDR266, 166 MHz for DDR333, and 200 MHz for DDR400. 3) Input slew rate = 1 V/ns. 4) Enables on-chip refresh and address counters. 5) Low power available on request 4.5 IDD Current Measurement Conditions Legend: A = Activate, R = Read, RA = Read with Autoprecharge, P = Precharge, N = NOP or DESELECT IDD1: Operating Current: One Bank Operation 1. General test condition a) Only one bank is accessed with tRC,MIN. b) Burst Mode, Address and Control inputs are changing once per NOP and DESELECT cycle. c) 50% of data changing at every transfer d) IOUT = 0 mA. 2. Timing patterns a) DDR266A (133 MHz, CL = 2): tCK = 7.5 ns, BL = 4, tRCD = 3 x tCK, tRC = 9 x tCK, tRAS = 5 x tCK Setup: A0 N N R0 N P0 N N N Read: A0 N N R0 N P0 N NN - repeat the same timing with random address changing Data Sheet 75 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Electrical Characteristics b) DDR333B (166 MHz, CL = 2.5): tCK = 6 ns, BL = 4, tRCD = 3 x tCK, tRC = 9 x tCK, tRAS = 5 x tCK Setup: A0 N N R0 N P0 N N N Read: A0 N N R0 N P0 N N N - repeat the same timing with random address changing c) DDR400B (200 MHz, CL = 3): tCK = 5 ns, BL = 4, tRCD = 3 x tCK, tRC = 11 x tCK, tRAS = 8 x tCK Setup:A0 N N R0 N N N N P0 N N Read: A0 N N R0 N N N N P0 N N -repeat the same timing with random address changing IDD7: Operating Current: Four Bank Operation 1. General test condition a) Four banks are being interleaved with tRCMIN. b) Burst Mode, Address and Control inputs on NOP edge are not changing. c) 50% of data changing at every transfer d) IOUT = 0 mA. 2. Timing patterns a) DDR266A (133 MHz, CL = 2): tCK = 7.5 ns, BL = 4, tRRD = 2 x tCK, tRCD = 3 x tCK, tRAS = 5 x tCK Setup: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 Read: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 - repeat the same timing with random address changing b) DDR333B (166 MHz, CL = 2.5): tCK = 6 ns, BL = 4, tRRD = 2 x tCK, tRCD = 3 x tCK, tRAS = 5 x tCK Setup: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 Read: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 - repeat the same timing with random address changing c) DDR400B (200 MHz, CL = 3): tCK = 5 ns, BL = 4, tRRD = 2 x tCK, tRCD = 3 *x tCK, tRAS = 8 x tCK Setup: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 N Read: A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 N - repeat the same timing with random address Data Sheet 76 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Timing Diagrams 5 5.1 Timing Diagrams Write Command: Data Input Timing The timing diagrams in this chapter give an overview of possible and recommended command sequences. Figure 39 shows DQS versus DQ and DM Timing during write burst. tDQSL tDQSH DQS tDH tDS DQ DI n tDH tDS DM DI n = Data In for column n. 3 subsequent elements of data in are applied in programmed order following DI n. Don't Care Figure 39 Data Input (Write), Timing Burst Length = 4 Data Sheet 77 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Timing Diagrams 5.2 Read Command: Data Output Timing Figure 40 shows DQS versus DQ Timing during read burst. DQS tDQSQ max tQH DQ tQH (Data output hold time from DQS) tDQSQ and tQH are only shown once and are shown referenced to different edges of DQS, only for clarify of illustration. . tDQSQ and tQH both apply to each of the four relevant edges of DQS. tDQSQ max. is used to determine the worst case setup time for controller data capture. tQH is used to determine the worst case hold time for controller data capture. Figure 40 Data Output (Read), Timing Burst Length = 4 Data Sheet 78 Rev. 1.6, 2004-12 5.3 Figure 41 Data Sheet * VTT is not applied directly to the device, however tVTD must be greater than or equal to zero to avoid device latchup. ** tMRD is required before any command can be applied and 200 cycles of CK are required before a Read command can be applied. The two Autorefresh commands may be moved to follow the first MRS, but precede the second Precharge All command. tVTD tCK tCH VDD VDDQ VTT (System*) VREF 200 cycles of CK** tCL tMRD tMRD tRP tRFC tRFC tMRD CK CK tIH tIS 200s Initialize and Mode Register Sets tIH tIS NOP PRE EMRS MRS PRE AR AR MRS ACT CKE LVCMOS LOW LEVEL Command Initialization and Mode Register Set Command Figure 41 shows the timing diagram for initialization and Mode Register Sets. 79 tIH tIS CODE tIH tIS CODE CODE tIS tIS tIH tIH CODE DM A0-A9, A11 CODE RA A10 ALL BANKS tIH tIS BA0=H BA1=L BA0=L BA1=L CODE RA ALL BANKS BA0, BA1 BA0=L BA1=L BA High-Z DQS High-Z DQ HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Timing Diagrams Rev. 1.6, 2004-12 Power-up: VDD and CK stable Don't Care Extended Mode Register Set Load Mode Register, Reset DLL Load Mode Register (with A8 = L) 5.4 Figure 42 Figure 42 shows the timing diagram for Power Down Mode. Data Sheet tCK tCH tCL tIS tIS NOP NOP VALID CK CK tIH tIS Power: Power Down Mode Command Power Down Mode VALID CKE tIH tIS Command VALID* tIH tIS ADDR VALID DQS 80 Enter Power Down Mode DQ DM Exit Power Down Mode HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM No column accesses are allowed to be in progress at the time power down is entered. * = If this command is a Precharge (or if the device is already in the idle state) then the power down mode shown is Precharge power down. If this command is an Active (or if at least one row is already active), then the power down mode shown is Active power down. Don't Care Timing Diagrams Rev. 1.6, 2004-12 5.5 Figure 43 tRP tCH tCK tRFC tRFC tCL Data Sheet VALID VALID NOP NOP AR NOP AR NOP NOP ACT RA RA RA CK CK tIH tIS Auto Refresh Mode CKE tIH tIS Command NOP PRE A0-A8 A9, A11,A12 ALL BANKS Figure 43 shows the timing diagram for Auto Refresh Mode. Refresh: Auto Refresh Mode Command 81 tIH A10 ONE BANK tIS BA BA0, BA1 BANK(S) DQS DQ DM PRE = Precharge; ACT = Active; RA = Row address; BA = Bank address; AR = Autorefresh. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. DM, DQ, and DQS signals are all don't care/high-Z for operations shown. HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Timing Diagrams Rev. 1.6, 2004-12 Don't Care 5.6 Figure 44 Data Sheet Clock must be stable before exiting Self Refresh Mode tCK tCH tCL tRP* 200 cycles Self Refresh Mode tIH tIS tIS tIH tXSRD, tXSRN AR NOP VALID tIH tIS VALID CK CK tIS CKE tIS Command NOP Figure 44 shows the timing diagram for Self Refresh Mode. Refresh: Self Refresh Mode Command 82 Enter Self Refresh Mode Exit Self Refresh Mode ADDR DQS DQ DM HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM * = Device must be in the all banks idle state before entering Self Refresh Mode. ** = tXSNR is required before any non-read command can be applied, and tXSRD (200 cycles of CK). are required before a Read command can be applied. Timing Diagrams Rev. 1.6, 2004-12 Don't Care 5.7 tCK tCH tRP Figure 45 tCL Data Sheet tIH tIS VALID tIH tIS NOP NOP PRE NOP NOP ACT NOP NOP NOP tIH tIS Read VALID VALID tIH CK CK CKE Command A0-A9, A11, A12 COL n RA tIH tIS ALL BANKS RA A10 DIS AP ONE BANK tIH tIS BA x BA x* BA x BA0, BA1 Read: Without Auto Precharge Command Figure 45 shows the timing diagram for Read without Auto Precharge. Read without Auto Precharge (Burst Length = 4) 83 tLZ (min) tRPRE tAC (min) tRPST tDQSCK (min) tHZ (min) DM DQS Case 1: tAC/tDQSCK = min CL=2 DO n tLZ (max) tRPRE DQ DQS tAC (max) tLZ (max) tHZ (max) tRPST tDQSCK (max) Case 2: tAC/tDQSCK = max DQ DO n DO n = data out from column n. 3 subsequent elements of data out are provided in the programmed order following DO n. Don't Care HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Timing Diagrams Rev. 1.6, 2004-12 DIS AP = Disable Auto Precharge. * = Don't care if A10 is High at this point. PRE = Precharge; ACT = Active; RA = Row address; BA = Bank address. NOP commands are shown for ease of illustration; other commands may be valid at these times. 5.8 Figure 46 tCK tCH tRP tCL Data Sheet tIH tIS VALID tIH tIS VALID VALID tIH CK CK CKE Command tIH tIS COL n tIH tIS RA NOP Read NOP NOP NOP NOP ACT NOP NOP NOP A0-A9, A11, A12 A10 EN AP tIH tIS BA x BA x RA BA0, BA1 Read: With Auto Precharge Command Figure 46 shows the timing diagram for Read with Auto Precharge. Read with Auto Precharge (Burst Length = 4) 84 tLZ (min) tRPRE tLZ (min) tAC (min) tRPST tDQSCK (min) tHZ (min) DM DQS Case 1: tAC/tDQSCK = min CL=2 DO n tLZ (max) tRPRE DQ DQS tAC (max) tLZ (max) tHZ (max) tRPST tDQSCK (max) Case 2: tAC/tDQSCK = max DQ DO n HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Timing Diagrams Rev. 1.6, 2004-12 DO n = data out from column n. 3 subsequent elements of data out are provided in the programmed order following DO n. EN AP = enable Auto Precharge. ACT = active; RA = row address. NOP commands are shown for ease of illustration; other commands may be valid at these times. Don't Care 5.9 tCK tCH Figure 47 tCL Data Sheet tIH tIS VALID tIH tIS NOP NOP Read NOP PRE NOP NOP ACT NOP tIH tIS RA COL n tIH tIS ALL BANKS RA ONE BANK RA ACT tRC CK CK CKE Command A0-A9, A11, A12 A10 DIS AP tIH tIS BA x BA x BA x* BA x Bank Read Access (Burst Length = 4) RA BA0, BA1 Read: Bank Read Access Command Figure 47 shows the timing diagram for Read Bank Read Access. 85 tLZ (min) tRPRE tRP tRCD tRAS tLZ (min) tAC (min) tRPST tDQSCK (min) DM DQS tHZ (min) Case 1: tAC/tDQSCK = min CL=2 DO n tLZ (max) tRPRE DQ DQS tHZ (max) tAC (max) tLZ (max) tRPST tDQSCK (max) Case 2: tAC/tDQSCK = max DQ DO n HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Timing Diagrams Rev. 1.6, 2004-12 DO n = data out from column n. 3 subsequent elements of data out are provided in the programmed order following DO n. DIS AP = disable Auto Precharge. * = Don't care if A10 is High at this point. PRE = Precharge; ACT = Active; RA = Row address; BA = Bank address. NOP commands are shown for ease of illustration; other commands may be valid at these times. Don't Care 5.10 tCH tCK tCL tRP tWR Figure 48 Data Sheet tIH VALID NOP NOP NOP NOP PRE NOP NOP ACT tIH RA tIH CK CK tIH tIS CKE tIH tIS Command NOP Write tIS A0-A9, A11, A12 COL n tIS ALL BANKS RA A10 ONE BANK tIH DIS AP Write: Without Auto Precharge Command Figure 48 shows the timing diagram for Write without Auto Precharge. Write without Auto Precharge (Burst Length = 4) 86 BA x BA x* tWPRE tDQSH tDQSS tWPST tDQSL tDSH DIn tIS BA BA0, BA1 tWPRES DQS DQ DM HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Timing Diagrams Rev. 1.6, 2004-12 tDQSS = min. DIn = Data in for column n. 3 subsequent elements of data in are applied in the programmed order following DIn. DIS AP = Disable Auto Precharge. * = Don't care if A10 is High at this point. PRE = Precharge; ACT = Active; RA = Row address; BA = Bank address. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. Don't Care 5.11 tCH tCK tCL tRP tWR Figure 49 Data Sheet tDAL VALID VALID VALID NOP NOP NOP NOP NOP NOP NOP ACT tIH RA tIH RA tIH CK CK tIH tIS CKE tIH tIS Command NOP Write tIS A0-A9, A11, A12 COL n tIS A10 EN AP Write: With Auto Precharge Command Figure 49 shows the timing diagram for Write with Auto Precharge. Write with Auto Precharge (Burst Length = 4) 87 BA x tDSH tDQSH tDQSL tWPST tDQSS DIn tWPRE tIS BA BA0, BA1 tWPRES DQS DQ DM tDQSS = min. HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Timing Diagrams Rev. 1.6, 2004-12 DIn = Data in for column n. 3 subsequent elements of data in are applied in the programmed order following DIn. EN AP = Enable Auto Precharge. ACT = Active; RA = Row address; BA = Bank address. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. Don't Care 5.12 Figure 50 tCH tCK tCL Data Sheet VALID tRAS ACT NOP Write NOP NOP NOP NOP PRE NOP tIH tIS RA Col n tIH tIS RA CK CK tIH tIS CKE tIH tIS Command NOP A0-A9, A11, A12 Bank Write Access (Burst Length = 4) ALL BANKS ONE BANK tIH tIS BA x BA x tRCD tWPRES tDQSH tDQSS tDQSL tWPST tDSH tWR BA x Write: Bank Write Access Command Figure 50 shows the timing diagram for Bank Write Access. A10 DIS AP 88 DIn tWPRE BA0, BA1 DQS DQ DM HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM tDQSS = min. DI n = data in for column n. 3 subsequent elements of data in are applied in the programmed order following DI n. DIS AP = Disable Auto Precharge. * = don't care if A10 is High at this point. PRE = Precharge; ACT = Active; RA = Row address. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. Timing Diagrams Rev. 1.6, 2004-12 Don't Care 5.13 tCH tCK tCL Figure 51 Data Sheet VALID NOP NOP NOP NOP PRE NOP NOP ACT CK CK tIH tIS CKE tIH tIS Command tIH Write: DM Operation NOP Write tIS COL n RA A0-A9, A11, A12 tIH tIS ALL BANKS RA Figure 51 shows the timing diagram for DM Operation. Write DM Operation (Burst Length = 4) ONE BANK tIH A10 DIS AP 89 BA x BA x* tWR tDQSH tDQSS tDQSL tWPST tDSH DIn tIS BA BA0, BA1 tWPRES tRP DQS DQ DM HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Timing Diagrams DI n = data in for column n. 3 subsequent elements of data in are applied in the programmed order following DI n (the second element of the 4 is masked). DIS AP = Disable Auto Precharge. * = Don't care if A10 is High at this point. PRE = Precharge; ACT = Active; RA = Row address; BA = Bank address. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. tDQSS = min. Rev. 1.6, 2004-12 Don't Care HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM System Characteristics for DDR SDRAMs 6 System Characteristics for DDR SDRAMs The following specification parameters are required in systems using DDR400, DDR333 & DDR266 devices to ensure proper system performance. These characteristics are for system simulation purposes and are not subject to production test - verified by design/characterization. Table 25 Parameter Input Slew Rate for DQ, DQS, and DM Symbol DDR400 4.0 DDR333 0.5 4.0 DDR266 0.5 4.0 Units Notes V/ns 1)2) AC Characteristics Min. Max. Min. Max. Min. Max. DM/DQS inout slew rate measured berween DCSLEW 0.5 VIH(DC), VIL (DC), and VIL(DC), VIH (DC) 1) Pullup slew rate is characterized under the test conditions as shown in Figure 52. 2) DQS, DM, amd DQ input slew rate is specified to prevent doble clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic. Table 26 0.5 V/ns 0.4 V/ns 0.3 V/ns Input Setup & Hold Time Derating for Slew Rate tIS 0 +50 +100 Input Slew Rate tIH 0 0 0 Units ps ps ps Notes 1) 1) A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5 V/ns as shown in Table 26. The input slew rate is based on the lesser of the slew rates determined by either VIH (AC) to VIL (AC) or VIH (DC) to VIL (DC), similarly for rising transitions. Aderating factor applies to speed bins DDR200, DDR266, and DDR333. Table 27 0.5 ns/V 0.4 ns/V 0.3 ns/V Input/Output Setup and Hold TIme Derating for Slew Rate tDS 0 +75 +100 I/O Input Slew Rate tDH 0 +75 +100 Units ps ps ps Notes 1) 1) Table 27 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser of the AV - AC slew rate and the DC - DC slew rate. The input slew rate is based on the lesser of the slew rates determined by either VIH (AC) to VIL (AC) or VIH (DC) to VIL (DC), and similarly for rising transitions. A derating factor applies to speed bins DDR200, DDR266 and DDR333. Table 28 0.0 ns/V 0.25 ns/V 0.5 ns/V Input/Output Setup and Hold Derating for Rise/Fall Delta Slew Rate tDS 0 +50 +100 Delta Slew Rate tDH 0 +50 +100 Units ps ps ps Notes 1) 1) A derating factor will be used to increase tDS and tDH in the case where DQ, DM and DQS slew rates differ, as shown in Figure 27 & Figure 28. Input slew rate is based on the larger of AC - AC delta rise, fall rate and DC - DC delta rise, fall rate. Input slew rate is based on the lesser of the slew rates determined by either VIH (AC) to VIL (AC) or VIH (DC) to VIL (DC), similarly for rising transitions. The delta rise/fall rate is calculated as:{1/(Slew Rate1)} - {1/(Slew Rate2)} For example: If Slew Rate 1 is 0.5 V/ns and Slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is -0.5 ns/V. Using the table given, this would result in the need for an increase in tDS and tDH of 100 ps. A derating factor applies to speed bins DDR200, DDR266, and DDR333. Data Sheet 90 Rev. 1.6, 2004-12 08012003-8754-PAQX HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM System Characteristics for DDR SDRAMs Table 29 Output Slew Rate Characteristrics (x4, x8 Devices only) Typical Range (V/ns) Minimum (V/ns) 1.2 - 2.5 1.2 - 2.5 1.0 1.0 Maximum (V/ns) Notes 4.5 4.5 1)2)3)4)5)6) 2)3)4)5)7) Slew Rate Characteristic Pullup Slew Rate Pulldown Slew Rate Table 30 Output Slew Rate Characteristics (x16 Devices only) Typical Range (V/ns) 1.2 - 2.5 1.2 - 2.5 Minimum (V/ns) 0.7 0.7 Maximum(V/ns) 5.0 5.0 Notes 1)2)3)4)5)6) 2)3)4)5)7) Slew Rate Characteristic Pullup Slew Rate Pulldown Slew Rate 1) Pullup slew rate is characterizted under the test conditions as shown in Figure 52 2) Pullup slew rate is measured between (VDDQ/2 - 320 mV 250 mV) Pulldown slew rate is measured between (VDDQ/2 + 320 mV 250mV) Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output switching.Example: For typical slew rate, DQ0 is switching.For minimum slew rate, all DQ bits are switchiung worst case pattern. For maximum slew rate, only one DQ is switching from either high to low, or low to high the remainig DQ bits remain the same as previous state. 3) Evaluation conditions: Typical: 25 C (T Ambient), VDDQ = nominal, typical process.Minimum: 70 C (T Ambient), minimum, slow - slow process. Maximum: 0 C (T Ambient), VDDQ = maximum, fast - fast process 4) Verified under typical conditions for qualification purposes. 5) TSOP II package devices only. 6) Only intended for operation up to 266 Mbps per pin. 7) Pulldown slew rate is measured under the test conditions shown in Figure 53. VDDQ = Table 31 Parameter Output Slew Rate Matching Ratio Characteristics DDR266A -- DDR266B -- -- DDR200 Max. 1.4 1) 2) Slew Rate Characteristic Notes Min. Max. Min. Max. Min. 0.71 Output SLew Rate Matching Ratio (Pullup to Pulldown) -- 1) The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. 2) DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic 9''4 2XWSXW 7HVW SRLQW 03%' Figure 52 Pullup slew rate test load 2XWSXW 9664 03%' 7HVW SRLQW Figure 53 Pulldown slew rate test load Data Sheet 91 Rev. 1.6, 2004-12 08012003-8754-PAQX HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Package Outlines 7 * Package Outlines P-TFBGA: Plastic Thin Fine-Pitch Ball Grid Array Package TFBGA Common Package Properties (non-green/green) Size 0.460 0.350 0.450 Units mm mm mm There are two package types used for this product family each in lead-free and lead-containing assembly: Table 32 Description Ball Size Recommended Landing Pad Recommended Solder Mask 12 11 x 1 = 11 1 0.2 0.18 MAX. 8 x 0.8 = 6.4 1.8 MAX. 0.8 B 5) 8 3) 4) A 5) 1) 0.05 2) 0.1 C 0.1 C 1.2 MAX. 0.31 MIN. o0.46 0.05 60x o0.15 M AB C o0.08 M 1.5 2) 4.25 C SEATING PLANE 1) A1 Marking Ballside 2) A1 Marking Chipside 3) Dummy Pads without Ball 4) Bad Unit Marking (BUM) 5) Middle of Packages Edges 2.24 GPA09555 Figure 54 Package Outline of P-TFBGA-60-12 (non-green/green) Data Sheet 92 Rev. 1.6, 2004-12 HYB25D256[16/40/80]0C[E/C/F/T](L) 256 Mbit Double-Data-Rate SDRAM Package Outlines * P-TSOPII: Plastic Thin Small Outline Package Type II 0.05 MIN. 1.20 MAX. Gage Plane 10.16 0.13 0.65 Basic 0.35 +0.1 -0.05 0.805 REF 0.1 Seating Plane 0.25 Basic 0.5 0.1 11.76 0.2 22.22 0.13 Lead 1 GPX09261 Figure 55 Package Outline of P-TSOPII-66-1 (non-green/green) Data Sheet 93 Rev. 1.6, 2004-12 www.infineon.com Published by Infineon Technologies AG |
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